Zobrazeno 1 - 10
of 15
pro vyhledávání: '"Gregory B. Shinn"'
Publikováno v:
Handbook of Semiconductor Manufacturing Technology ISBN: 9781315213934
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c5b22cbc0ed7800858f4ed876aa3429a
https://doi.org/10.1201/9781420017663-17
https://doi.org/10.1201/9781420017663-17
Autor:
S. R. Summerfelt, R. Bailey, P. Staubs, J. Rodriguez, K. Boku, Theodore S. Moise, M. Arendt, Gregory B. Shinn, K. Remack, J. Eliason, K. R. Udayakumar
Publikováno v:
Japanese Journal of Applied Physics. 47:2710-2713
Enhanced yield and reliability through process improvements, leading to a manufacturable process for a full-bit functional 8 Mbit one transitor–one capacitor (1T–1C) embedded ferroelectric random access memory (eFRAM) fabricated within a low-leak
Autor:
Yaw S. Obeng, Gregory B. Shinn, G. R. Fox, Theodore S. Moise, J. S. Martin, A. McKerrow, J. Gertas, S. R. Summerfelt, K. R. Udayakumar, J. Eliason, J. Rodriguez, R. Bailey, A. Haider, K. Remack, K. Boku
Publikováno v:
Japanese Journal of Applied Physics. 46:2180-2183
We report the electrical properties of a full-bit functional 8 Mbit one transitor–one capacitor (1T–1C) embedded ferroelectric random access memory (eFRAM) fabricated within a low-leakage 130 nm 5 lm Cu interconnect complementary metal oxide semi
Autor:
Gregory B. Shinn, Christopher L. Borst, Vincent Korthuis, William N. Gill, Ronald J. Gutmann, J.D. Luttmer
Publikováno v:
Thin Solid Films. 385:281-292
The effects of slurry chemistry and film properties on the chemical–mechanical polishing (CMP) of three organosilicate glasses (SiOC) were used to develop an understanding of the removal mechanism during SiOC CMP. The SiOC removal rate varied from
Autor:
Sean C. O'Brien, D.D. White, Jimmy W. Hosch, Gregory B. Shinn, G.G. Barna, K. J. Brankner, Kelly J. Taylor, Roger A. Robbins, A. Lane, Maureen A. Hanratty, L.M. Loewenstein
Publikováno v:
IEEE Transactions on Semiconductor Manufacturing. 7:149-158
This paper describes the equipment and processes utilized in the Microelectronics Manufacturing Science and Technology (MMST) program. The processes were carried out in a combination of testbeds (AVP, the TI designed and built Advanced Vacuum Process
Autor:
K. R. Udayakumar, A. Haider, M. Depner, Theodore S. Moise, Sudhir K. Madan, K. Boku, J. Eliason, Hugh P. McAdams, R. Bailey, Gregory B. Shinn, K. Remack, D. Kim, P. Staubs, John A. Rodriguez, Scott R. Summerfelt, J. Gertas
Publikováno v:
2008 17th IEEE International Symposium on the Applications of Ferroelectrics.
Reliability data is presented for a 4Mb Ferroelectric Random Access Memory (F-RAM) embedded within a 130nm CMOS process. Write/read endurance in the device exhibits stable intrinsic bit properties through 2.7x1013 cycles. Data retention demonstrates
Autor:
M. Depner, D. Kim, Theodore S. Moise, Scott R. Summerfelt, Hugh P. McAdams, J. Eliason, J. Rodriguez, J. Gertas, P. Staubs, Sudhir K. Madan, K. Remack, Gregory B. Shinn, K. R. Udayakumar, K. Boku, R. Bailey
Publikováno v:
2007 Non-Volatile Memory Technology Symposium.
Reliable operation of a 4 Mb ferroelectric random access memory (FRAM) embedded within a standard 130 nm CMOS process is demonstrated. Intrinsic endurance test to 5.4times1012 cycles shows no degradation of switched polarization. 10 year, 85degC, dat
Autor:
Gregory B. Shinn, R. Bailey, Theodore S. Moise, J. Rodriguez, K. Remack, S. R. Summerfelt, K. Boku, M. Arendt, P. Staubs, J. Eliason, J. Gertas, K. R. Udayakumar
Publikováno v:
Extended Abstracts of the 2007 International Conference on Solid State Devices and Materials.
Autor:
B. Khan, Glen R. Fox, J. Rodriguez, J. Groat, A. Haider, R. Bailey, N. Schauer, Sudhir K. Madan, K. Remack, K. R. Udayakumar, Yaw S. Obeng, K. Boku, A. McKerrow, G. Albrecht, J. S. Martin, Gregory B. Shinn, E. Jabillo, J. Walbert, S. R. Summerfelt, Theodore S. Moise, Hugh P. McAdams, Sanjeev Aggarwal, D. Anderson, J. Gertas, Francis G. Celii, J. Eliason
Publikováno v:
Extended Abstracts of the 2006 International Conference on Solid State Devices and Materials.
Autor:
Gregory B. Shinn, Robert H. Havemann, Ken Brennan, Kelly J. Taylor, Girish A. Dixit, Anthony J. Konecni, Mi-Chang Chang, Abha Singh, Charles K. Lee, Wei-Yung Hsu
Publikováno v:
1996 Symposium on VLSI Technology. Digest of Technical Papers.
Low temperature aluminum plug fill schemes such as CVD Al and high pressure ForceFill/sup TM/ Al offer significant advantages in terms of lower via resistance and compatibility with low-k polymer dielectrics. The low processing temperature is desirab