Zobrazeno 1 - 10
of 12
pro vyhledávání: '"Gregor Koblmueller"'
Autor:
Fatima Toor, Lukas Stampfer, John P. Prineas, Kailing Zhang, Gregor Koblmueller, J. Treu, Xinxin Li
Publikováno v:
Nano Letters. 19:990-996
Contactless time-resolved optical pump-probe and external quantum efficiency measurements were performed in epitaxially grown free-standing wurtzite indium arsenide/indium aluminum arsenide (InAs-InAlAs) core-shell nanowires on Si (111) substrate fro
Autor:
Gerhard Abstreiter, Jakob Seidl, Bernhard Loitsch, J. Becker, Jonathan J. Finley, Dominik M. Irber, Sergej Fust, Damon J. Carrad, Anton Faustmann, Gregor Koblmueller
Publikováno v:
2019 Compound Semiconductor Week (CSW).
Semiconductor nanowires (NW) can solve the problem of inefficient conversion of waste heat to electricity. The large surface-to-volume ratio results in reduced thermal transport due to phonon scattering while the electrical performance can be improve
Autor:
Thomas Stettner, Paul Schmiedeke, Andreas Thurn, Markus Döblinger, Jochen Bissinger, Sonja Matich, Daniel Ruhstorfer, Hubert Riedl, Jonathan J. Finley, Gregor Koblmueller
Publikováno v:
Conference on Lasers and Electro-Optics.
Autor:
Jochen Bissinger, Paul Schmiedeke, Andreas Thurn, Thomas Stettner, Gregor Koblmueller, Jonathan J. Finley, Daniel Ruhstorfer, Markus Doeblinger
Publikováno v:
2019 Compound Semiconductor Week (CSW)
Recent demonstrations of direct integration of GaAs-based nanowire lasers on Si photonic circuits exhibited efficient in-coupling of lasing emission to proximal waveguides - however, transmission in the Si waveguide suffered from high absorption loss
Autor:
Michael Kaniber, Thomas Stettner, H. Riedl, Gregor Koblmueller, Tobias Kostenbader, Jochen Bissinger, Jonathan J. Finley, Daniel Ruhstorfer
Publikováno v:
Optical Interconnects XVIII.
Semiconductor nanowire (NW) lasers are nanoscale coherent light sources that exhibit a small footprint, low-threshold lasing characteristics, and properties suitable for monolithic integration onto Si photonic circuits. An important milestone on the
Autor:
Juan Salvador Dominguez Morales, Tomasz J. Ochalski, Thomas Stettner, Gregor Koblmueller, Shumithira Gandan, David P. Williams, Jonathan J. Finley
Publikováno v:
Silicon Photonics XIII
III-V semiconductor nanowires (NW) are being considered as future coherent light sources for optoelectronic chips due to their small footprint and high refractive index. The 1D confinement also results in a natural Fabry-Perot resonance cavity. Howev
Autor:
Xinxin Li, John P. Prineas, Kailing Zhang, Lukas Stampfer, J. Treu, Fatima Toor, Gregor Koblmueller
Publikováno v:
Conference on Lasers and Electro-Optics.
Ultrafast and external quantum efficiency measurements were performed on InAs/InAlAs core-shell nanowires. Rates of different recombination mechanisms were determined, and the carrier densities ranges at which each dominates, an important considerati
Autor:
Sabrina Sterzl, A. Regler, Benedikt Mayer, Gregor Koblmueller, Michael Kaniber, Benjamin Lingnau, Jonathan J. Finley, Kathy Lüdge, Tom Stettner
Publikováno v:
Novel In-Plane Semiconductor Lasers XVI.
Wavelength scale coherent optical sources are vital for a wide range of applications in nanophotonics ranging from metrology and sensing to nonlinear frequency generation and optical switching. In these respects, semiconductor nanowires (NWs) are of
Autor:
Hubert J. Krenner, Stefanie Morkoetter, Lincoln J. Lauhon, Bernhard Loitsch, Gregor Koblmueller, Gerhard Abstreiter, Nari Jeon, Jonathan J. Finley
GaAs-AlxGa1-xAs (AlGaAs) core-shell nanowires show great promise for nanoscale electronic and optoelectronic devices, but the application of these nonplanar heterostructures in devices requires improved understanding and control of nanoscale alloy co
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3a11202d77c94b7eccd0e275593c613e
https://opus.bibliothek.uni-augsburg.de/opus4/frontdoor/index/index/docId/44078
https://opus.bibliothek.uni-augsburg.de/opus4/frontdoor/index/index/docId/44078
Autor:
H. Dennis Drew, Seongshik Oh, Schmadel Donald C, Gregor Koblmueller, Max Bichler, Matthew Brahlek, Andrei B. Sushkov, Namrata Bansal, Gregory S. Jenkins
Publikováno v:
Physical Review B. 87
Gated terahertz cyclotron resonance measurements on epitaxial Bi${}_{2}$Se${}_{3}$ thin films capped with In${}_{2}$Se${}_{3}$ enable the first spectroscopic characterization of a single topological interface state from the vicinity of the Dirac poin