Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Greg Strossman"'
Autor:
Li Yang, Greg Strossman, Michael V. Lee, Matthew R. Linford, David Connley, Vincent S. Smentkowski, Robert C. Davis, Feng Zhang, Eliot Bennion, Guilin Jiang, Matthew C. Asplund, Lei Pei
Publikováno v:
Langmuir. 22:10859-10863
In this letter, we report a new and extremely rapid technique for surface modification, which we term laser activation modification of semiconductor surfaces or LAMSS. This method consists of wetting a semiconductor surface (e.g., silicon or germaniu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e8531f2aba5c0074ae45f63b48b67d4b
https://doi.org/10.1021/la060562h
https://doi.org/10.1021/la060562h
Autor:
Gary Mount, Karol Putyera, Greg Strossman, Patrick Schnabel, Udit Sharma, John Moskito, Temel Buyuklimanli, Larry Wang
Publikováno v:
2011 37th IEEE Photovoltaic Specialists Conference.
Conversion efficiency for Cu(In x , Ga 1−x )Se 2 is dependent on a number of factors including band-gap and defect structures. Material composition affects band gap and it affects the formation of defect structures. A fundamental understanding of t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::589fac667f13034943d9f010c01e2b78
https://doi.org/10.1109/pvsc.2011.6186198
https://doi.org/10.1109/pvsc.2011.6186198
Modification of hydroxyl-terminated self-assembled monolayer (HO-SAM) surfaces by collision of low-energy (15 eV) hyperthermal Si(CH3)3+ ions is shown to lead to Si-O bond formation and terminal trimethylsilyl ether formation. Modification was verifi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::71f87e080f4f8fbfe994654230af9848
http://hdl.handle.net/11573/48796
http://hdl.handle.net/11573/48796
