Zobrazeno 1 - 5
of 5
pro vyhledávání: '"Greg Slovin"'
Autor:
Howard David J, Robert M. Young, Thomas Beglin, Farooq Amin, Greg Slovin, Doyle T. Nichols, Nicholas Edwards, El-Hinnawy Nabil
Publikováno v:
2021 IEEE MTT-S International Microwave Symposium (IMS).
This paper presents, for the first time, high performance wideband RF switches, single pole double throw (SPDT) and single pole four throw (SP4T), using phase change material (PCM) monolithically integrated into a SiGe BiCMOS process. The insertion l
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c70e0cb6bd8abf05bc4b9631f2a7aff7
https://doi.org/10.1109/ims19712.2021.9574962
https://doi.org/10.1109/ims19712.2021.9574962
Publikováno v:
2021 IEEE MTT-S International Microwave Symposium (IMS).
Here we report on multiple series-only SPNT circuits that utilize non-volatile phase-change material (PCM) radio-frequency (RF) switches: a single-pole, single-throw (SPST, SP1T), a single-pole, double-throw (SPDT, SP2T), a single-pole, four-throw (S
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b876c0312caf8e7e15ab157eb6a0595d
https://doi.org/10.1109/ims19712.2021.9574818
https://doi.org/10.1109/ims19712.2021.9574818
Publikováno v:
2021 IEEE MTT-S International Microwave Symposium (IMS).
Device stacking in the PCM RF switch technology is demonstrated for the first time to significantly improve OFF-state voltage and power handling capability. Due to the extremely low C OFF of the unit device, traditional device stacking is both limite
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8047bfd2be635444ae2824e099147bc2
https://doi.org/10.1109/ims19712.2021.9574954
https://doi.org/10.1109/ims19712.2021.9574954
Publikováno v:
2017 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP).
We report on an emerging class of non-volatile solid-state RF switch that can routinely achieve cutoff frequencies above 10 THz. The switch element is constructed of GeTe, a phase change chalcogenide that can be thermally cycled between a conductive
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b1d606e444268a1a0b8598135096f751
https://doi.org/10.1109/imws-amp.2017.8247383
https://doi.org/10.1109/imws-amp.2017.8247383
Autor:
Sandipan Kundu, Ahmad Khairi, James A. Bain, Tuviah E. Schlesinger, Min Xu, Rahul Singh, Greg Slovin, Jeyanandh Paramesh
Publikováno v:
2015 IEEE International Electron Devices Meeting (IEDM).
This paper presents the first reported in-situ reconfiguration of a narrowband CMOS low noise amplifier (LNA) over two widely separated frequency bands using a GeTe phase-change (PC) switch. Previous work has demonstrated the attractiveness of CMOS-P
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6b3f9965285e03338e08fad664b04273
https://doi.org/10.1109/iedm.2015.7409764
https://doi.org/10.1109/iedm.2015.7409764