Zobrazeno 1 - 2
of 2
pro vyhledávání: '"Greg L. Olson"'
Autor:
Scott M. Johnson, Terence J. de Lyon, George R. Chapman, Jeffrey M. Peterson, Michael D. Jack, Rajesh D. Rajavel, John E. Jensen, Tod S. Williamson, Valerie Randall, John A. Roth, Peter D. Brewer, W. A. Radford, Alex C. Childs, A. A. Buell, Steven L. Bailey, E. A. Patten, K. Kosai, Greg L. Olson, Eli E. Gordon, Andrew T. Hunter, Kevin D. Maranowski, L. T. Pham, J. B. Varesi, J. W. Bangs, Jerry A. Wilson
Publikováno v:
Materials for Infrared Detectors.
Since its initial synthesis and investigation more than 40 years ago, the HgCdTe alloy semiconductor system has evolved into one of the primary infrared detector materials for high-performance infrared focal-plane arrays (FPA) designed to operate in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c8be7ded5e67bdb3e7f6fd181657c657
https://doi.org/10.1117/12.448189
https://doi.org/10.1117/12.448189
Autor:
K. Kosai, Greg L. Olson, Eli E. Gordon, Andrew T. Hunter, Terence J. de Lyon, Michael D. Jack, George R. Chapman, Bonnie A. Baumgratz, M. Sen, John E. Jensen, Blaine D. Johs, W.B. Johnson, Burt Walker, W. Larsen
Publikováno v:
SPIE Proceedings.
Separate absorption and multiplication avalanche photodiode (SAM-APD) device structures, operating in the 1.1 - 1.6 micrometer spectral range, have been fabricated in the HgCdTe material system by molecular-beam epitaxy. These HgCdTe device structure
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::768953a548c0bd7b4a5ee07a641e197a
https://doi.org/10.1117/12.344562
https://doi.org/10.1117/12.344562