Zobrazeno 1 - 10
of 11
pro vyhledávání: '"Greg Heuss"'
Publikováno v:
Journal of Electronic Materials. 30:1493-1498
In this work, we have studied the electrical and thermal stability of Ru and RuO2 electrodes on ZrO2 and Zr-silicate dielectrics. Very low resistivity Ru and rutile stoichiometric RuO2 films, deposited by reactive sputtering, were evaluated as gate e
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::63982f1f91ff009c7712bfdab7bc7717
https://doi.org/10.1007/s11664-001-0164-2
https://doi.org/10.1007/s11664-001-0164-2
Publikováno v:
IEEE Electron Device Letters. 24:439-441
In this letter, the effect of silicon and nitrogen on the electrical properties of TaSi/sub x/N/sub y/ gate electrode were investigated. The TaSi/sub x/N/sub y/ films were deposited on SiO/sub 2/ using reactive cosputtering of Ta and Si target in Ar
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6aff711f10ee2acde76d9a0a6e3503de
https://doi.org/10.1109/led.2003.814009
https://doi.org/10.1109/led.2003.814009
Publikováno v:
Applied Physics Letters. 80:1403-1405
In this letter, the Fowler–Nordheim tunneling in TaSixNy/SiO2/p-Si structures has been analyzed. The effective barrier height at the metal–oxide interface was extracted by Fowler–Nordheim current analysis. The barrier height was found to increa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::844033e76a34aecae396874877d8db16
https://doi.org/10.1063/1.1453478
https://doi.org/10.1063/1.1453478
Publikováno v:
Applied Physics Letters. 78:4166-4168
Metal–oxide–semiconductor capacitors were used to study the interaction of Hf and Zr gate electrodes on SiO2, ZrSixOy, and ZrO2. A large reduction in the SiO2 equivalent oxide thickness accompanied by an increase in the leakage current was observ
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a8668425b7bbf39f306641b73d7e7e1d
https://doi.org/10.1063/1.1380240
https://doi.org/10.1063/1.1380240
Publikováno v:
Applied Physics Letters. 78:1134-1136
The rutile stoichiometric phase of RuO2, deposited via reactive sputtering, was evaluated as a gate electrode on chemical vapor deposited ZrO2 and Zr silicate for Si–p-type metal–oxide–semiconductor (PMOS) devices. Thermal and chemical stabilit
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8bee9981b366bb005115d4cbc7e5ea6c
https://doi.org/10.1063/1.1347402
https://doi.org/10.1063/1.1347402
Publikováno v:
Digest. International Electron Devices Meeting.
This paper describes a metal gate process, which provides tunable work function values and ease of integration for dual metal gate process flow. Vertical stacks of Ru and Ta layers were subjected to high temperature anneals to promote intermixing whi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b15fe877fd29272f807b090b965c6980
https://doi.org/10.1109/iedm.2002.1175852
https://doi.org/10.1109/iedm.2002.1175852
Publikováno v:
International Electron Devices Meeting. Technical Digest (Cat. No.01CH37224).
This paper describes the characteristics of binary metallic alloys of Ta and Ru for gate electrode applications. The work function of this alloy can be varied from 4.2 eV to 5.2 eV by controlling the composition thereby enabling its use in both NMOS
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1be8abc0d44db7f0cf6e4a071200aeb9
https://doi.org/10.1109/iedm.2001.979543
https://doi.org/10.1109/iedm.2001.979543
Publikováno v:
MRS Proceedings. 716
In this work, we report the effects of nitrogen on electrical and structural properties in TaSixNy /SiO2/p-Si MOS capacitors. TaSixNy films with various compositions were deposited by reactive sputtering of TaSi2 or by co-sputtering of Ta and Si targ
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::05078c3c0ceb1d884bd500e03dfbd35c
https://doi.org/10.1557/proc-716-b8.6
https://doi.org/10.1557/proc-716-b8.6
Autor:
Greg Heuss, Jason Kelly, Gregory N. Parsons, Huicai Zhong, You-Seok Suh, Veena Misra, Shin-Nam Hong
Publikováno v:
MRS Proceedings. 670
In this work, we studied the electrical and thermal stability of Ru and RuO2 electrode on Y-silicate dielectrics in contrast to ZrO2 and Al2O3 dielectrics. Very low resistivity Ru and rutile stoichiometric RuO2 films, deposited via reactive sputterin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::835333b351ac741aab38b9795c5c30b8
https://doi.org/10.1557/proc-670-k3.1
https://doi.org/10.1557/proc-670-k3.1
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 22:175
Reactively sputtered TaSixNy films have been investigated as gate electrodes for dual gate Si-complementary metal-oxide-semiconductor devices. The as-deposited TaSixNy films were amorphous over a wide range of compositions. After annealing at 1000 °
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::03f8ab984dded29ae4d56be0ce37c632
https://doi.org/10.1116/1.1640398
https://doi.org/10.1116/1.1640398