Zobrazeno 1 - 8
of 8
pro vyhledávání: '"Greet Storms"'
Autor:
Kaustuve Bhattacharyya, Rudy Peters, Greet Storms, Diederik de Bruin, Jara G. Santaclara, Rob van Ballegoij, Eelco van Setten, Teun van Gogh
Publikováno v:
International Conference on Extreme Ultraviolet Lithography 2022.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d6a1a308c004494b08b1ebb39702213f
https://doi.org/10.1117/12.2644966
https://doi.org/10.1117/12.2644966
Autor:
Marc Noot, Elliott McNamara, Chan Hwang, Kaustuve Bhattacharyya, Seung Yoon Lee, Frank van de Mast, Nang-Lyeom Oh, Se-Ra Jeon, Joost van Heijst, Noh-Kyoung Park, Arie Jeffrey Den Boef, Kun-tack Lee, Kevin An, SeungHwa Oh, Greet Storms
Publikováno v:
SPIE Proceedings.
With the increase of process complexity in advanced nodes, the requirements of process robustness in overlay metrology continues to tighten. Especially with the introduction of newer materials in the film-stack along with typical stack variations (th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::efd0e3530c1f43ec58e9259ce2f607b1
https://doi.org/10.1117/12.2222040
https://doi.org/10.1117/12.2222040
Autor:
Y. C. Ku, Takuya Mori, Chris de Ruiter, Greet Storms, Guo-Tsai Huang, Jon Wu, Christophe Fouquet, Kelvin Pao, Charlie Chen, Tatung Chow, C. W. Hsieh, Jacky Huang, KS Chen, T. S. Gau, Martijn van Veen, Martijn Maassen, Reinder Teun Plug, Pu Li, Chih-Ming Ke, Arie Jeffrey Den Boef, Paul Christiaan Hinnen, Hua Xu, Maurits van de Schaar, Kai-Hsiung Chen, Youping Zhang, Kaustuve Bhattacharyya, Yi-Yin Chen, Gary Zhang, Eric Verhoeven, Steffen Meyer
Publikováno v:
Metrology, Inspection, and Process Control for Microlithography XXVIII.
In order to meet current and future node overlay, CD and focus requirements, metrology and process control performance need to be continuously improved. In addition, more complex lithography techniques, such as double patterning, advanced device desi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b4c3afa285f770dc50332f9f9e6e84b3
https://doi.org/10.1117/12.2047098
https://doi.org/10.1117/12.2047098
Autor:
Ewould van West, Jin-Soo Kim, Won-Kwang Ma, Myoung-Soo Kim, Kyu-Tae Sun, Peter Nikolsky, Maryana Escalante Marun, Won-Taik Kwon, Greet Storms, Sungki Park, Marian Otter, Young-Sik Kim, Roy Anunciado
Publikováno v:
Metrology, Inspection, and Process Control for Microlithography XXVIII.
In this paper we describe the joint development and optimization of the critical dimension uniformity (CDU) at an advanced 300 mm ArFi semiconductor facility of SK Hynix in the high volume device. As the ITRS CDU specification shrinks, semiconductor
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1ae567d0bc5d284d39dc4280a2594586
https://doi.org/10.1117/12.2057390
https://doi.org/10.1117/12.2057390
Autor:
Greet Storms, Shaunee Cheng, Seiji Nagahara, Philippe Leray, Takahiro Machida, David Laidler, Ivan Pollentier, Sean C. O'Brien, Charles Schaap, Eric Jacobs, Kathleen Nafus
Publikováno v:
SPIE Proceedings.
The immersion effects on lithography-system performance have been investigated using a ASML TWINSCAN XT:1250Di immersion-ArF scanner (NA=0.85) and Tokyo Electron CLEAN TRACK ACT12 at IMEC. Effects of immersion-induced-temperature change and effects o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::898ba185c8d6b6d95476d73bbe9221a8
https://doi.org/10.1117/12.659620
https://doi.org/10.1117/12.659620
Autor:
Shaunee Cheng, John C. Robinson, Marcelo Cusacovich, Gian Lorusso, Greet Storms, Philippe Leray
Publikováno v:
SPIE Proceedings.
Resolution enhancement techniques (RET), immersion lithography, and Design for Manufacturing (DFM) are all geared towards increasing the lithographic process window to enable the ever more difficult processing demands of semiconductor manufacturing.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4ebefda1049e639d3e97aea4573d2fae
https://doi.org/10.1117/12.656503
https://doi.org/10.1117/12.656503
Publikováno v:
Metrology, Inspection, and Process Control for Microlithography XVIII.
For the 100nm technology node, the electrical measurement technique continues to play an important role as a metrology tool for generating large volumes of unbiased and statistically significant CD data. However, the ECD offset of approximately 35 to
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::378a41969c6ca686bf53ef900bd18e50
https://doi.org/10.1117/12.537346
https://doi.org/10.1117/12.537346
Autor:
Greet Storms, Sjoerd Lok, Rob van Ballegoij, Jan van Schoot, Rudy Peeters, Diederik de Bruin, Kars Troost, Teun van Gogh
Publikováno v:
Optical and EUV Nanolithography XXXV
SPIE Advanced Lithography + Patterning, 2022, San Jose, California, United States
SPIE Advanced Lithography + Patterning, 2022, San Jose, California, United States
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::03558a12fb1ca8b36da13436b61c7667
