Zobrazeno 1 - 10
of 27
pro vyhledávání: '"Greeshma Chandan"'
Autor:
Shu Chen, Andrei Bylinkin, Zhengtianye Wang, Martin Schnell, Greeshma Chandan, Peining Li, Alexey Y. Nikitin, Stephanie Law, Rainer Hillenbrand
Publikováno v:
Nature Communications, Vol 13, Iss 1, Pp 1-9 (2022)
The real-space imaging of propagating THz polaritons, coupled light-matter excitations, in topological insulators has been elusive so far. Here, the authors report spectroscopic THz near-field images of the topological insulator Bi2Se3 revealing pola
Externí odkaz:
https://doaj.org/article/e5bc8499dae548029f6db76efd5c726e
Autor:
Shruti Mukundan, Basanta Roul, Arjun Shetty, Greeshma Chandan, Lokesh Mohan, S. B. Krupanidhi
Publikováno v:
AIP Advances, Vol 5, Iss 12, Pp 127208-127208-7 (2015)
Nonpolar a-GaN (11-20) epilayers were grown on r-plane (1-102) sapphire substrates using plasma assisted molecular beam epitaxy. High resolution x-ray diffractometer confirmed the orientation of the grown film. Effect of the Ga/N ratio on the morphol
Externí odkaz:
https://doaj.org/article/9a563e03bcd2433fbe53e5595e2ec9fe
Autor:
Arjun Shetty, Basanta Roul, Shruti Mukundan, Lokesh Mohan, Greeshma Chandan, K. J. Vinoy, S. B. Krupanidhi
Publikováno v:
AIP Advances, Vol 5, Iss 9, Pp 097103-097103-11 (2015)
This paper reports an improvement in Pt/n-GaN metal-semiconductor (MS) Schottky diode characteristics by the introduction of a layer of HfO2 (5 nm) between the metal and semiconductor interface. The resulting Pt/HfO2/n-GaN metal-insulator-semiconduct
Externí odkaz:
https://doaj.org/article/fdedd8ef75f54b0da4879fe366105940
Autor:
Shruti Mukundan, Lokesh Mohan, Greeshma Chandan, Basanta Roul, S. B. Krupanidhi, Satish Shinde, K. K. Nanda, R. Maiti, S. K. Ray
Publikováno v:
AIP Advances, Vol 5, Iss 3, Pp 037112-037112-9 (2015)
Studies on the optical properties of InGaN alloy of relatively higher indium content are of potential interest to understand the effect of indium content on the optical band gap of epitaxial InGaN. We report the growth of self assembled non-polar hig
Externí odkaz:
https://doaj.org/article/fbbd9502d4b94fc08cca3484c4ab0bf8
Publikováno v:
AIP Advances, Vol 5, Iss 3, Pp 037130-037130-12 (2015)
We have grown InGaN/GaN heterostructures using plasma-assisted molecular beam epitaxy and studied the temperature dependent electrical transport characteristics. The barrier height (φb) and the ideally factor (η) estimated using thermionic emission
Externí odkaz:
https://doaj.org/article/c3e90571af254e8685a672a596575c3c
Autor:
Shu Chen, Andrei Bylinkin, Zhengtianye Wang, Martin Schnell, Greeshma Chandan, Peining Li, Alexey Y. Nikitin, Stephanie Law, Rainer Hillenbrand
Plasmon polaritons in topological insulators attract attention from a fundamental perspective and for potential THz photonic applications. Although polaritons have been observed by THz far-field spectroscopy on topological insulator microstructures,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::dd019c5854dc43c869396aaffdc1e9ee
http://arxiv.org/abs/2107.10791
http://arxiv.org/abs/2107.10791
Autor:
Shu, Chen, Andrei, Bylinkin, Zhengtianye, Wang, Martin, Schnell, Greeshma, Chandan, Peining, Li, Alexey Y, Nikitin, Stephanie, Law, Rainer, Hillenbrand
Publikováno v:
Nature communications. 13(1)
Plasmon polaritons in topological insulators attract attention from a fundamental perspective and for potential THz photonic applications. Although polaritons have been observed by THz far-field spectroscopy on topological insulator microstructures,
Autor:
Karuna Kar Nanda, S. B. Krupanidhi, Arun Malla Chowdhury, Deependra Kumar Singh, Greeshma Chandan, Rohit Pant, Basanta Roul, Saraswathi Chirakkara
Publikováno v:
IEEE Transactions on Electron Devices. 66:1345-1352
We report on the hybrid ZnO/AlN/Si heterostructure-based ultraviolet (UV) photodetectors with infrared- and visible-blind characteristics. The heterostructure was formed by depositing ZnO thin films on Si (111) substrate by introducing an AlN as an i
Autor:
Theresa P. Ginley, Stephanie Law, Chaoying Ni, Greeshma Chandan, Zhengtianye Wang, Yuying Zhang, Sivakumar Vishnuvardhan Mambakkam
Publikováno v:
Physical Review Materials. 4
Topological insulators (TIs) house two-dimensional Dirac plasmons on their surfaces. In TI thin films, plasmons on the top and bottom surfaces couple electrostatically, giving rise to an acoustic and an optical plasmon mode. By extension, a superlatt
Autor:
Basanta Roul, Karuna Kar Nanda, Rohit Pant, Greeshma Chandan, S. B. Krupanidhi, Saraswathi Chirakkara
Publikováno v:
IEEE Transactions on Electron Devices. 64:4161-4166
Studies have been carried out on the enhancement of responsivity and detectivity of the ZnO thin-films-based ultraviolet photodetectors by introducing an AlN buffer layer on silicon substrate. The ZnO film grown with AlN buffer layer established an e