Zobrazeno 1 - 10
of 361
pro vyhledávání: '"Greer, James A."'
Autor:
Wittmann, Angela, Gomonay, Olena, Litzius, Kai, Kaczmarek, Allison, Kossak, Alexander E., Wolf, Daniel, Lubk, Axel, Johnson, Tyler N., Tremsina, Elizaveta A., Churikova, Alexandra, Büttner, Felix, Wintz, Sebastian, Mawass, Mohamad-Assaad, Weigand, Markus, Kronast, Florian, Scipioni, Larry, Shepard, Adam, Newhouse-Illig, Ty, Greer, James A, Schütz, Gisela, Birge, Norman O., Beach, Geoffrey S. D.
Antiferromagnets have recently been propelled to the forefront of spintronics by their high potential for revolutionizing memory technologies. For this, understanding the formation and driving mechanisms of the domain structure is paramount. In this
Externí odkaz:
http://arxiv.org/abs/2210.16141
Publikováno v:
In Fire Safety Journal June 2024 146
Publikováno v:
2021 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA), 2021, pp. 1-2
We present quantum simulations of carbon nanotube field-effect transistors (CNT-FETs) based on top-gated architectures and compare to electrical characterization on devices with 15 nm channel lengths. A non-equilibrium Green's function (NEGF) quantum
Externí odkaz:
http://arxiv.org/abs/2108.07013
Publikováno v:
Phys. Rev. B 104, 045432 (2021)
The passivation of thin Bi(1 1 1) films with hydrogen and oxide capping layers is investigated from first principles. Considering termination-related changes of the crystal structure, we show how the bands and density of states are affected. In the c
Externí odkaz:
http://arxiv.org/abs/2104.07998
Publikováno v:
Phys. Rev. B 104, 035127 (2021)
The electronic band structure of Bi is calculated using state of the art electronic structure methods, including density functional theory and G$_0$W$_0$ quasiparticle approximations. The delicate ordering of states at the L point of the Brillouin zo
Externí odkaz:
http://arxiv.org/abs/2102.02018
We calculate the electronic structure of germanium-tin (Ge$_{1-x}$Sn$_{x}$) binary alloys for $0 \leq x \leq 1$ using density functional theory (DFT). Relaxed alloys with semiconducting or semimetallic behaviour as a function of Sn composition $x$ ar
Externí odkaz:
http://arxiv.org/abs/2012.11311
Autor:
Pingen, Katrin, Hinz, Alexander M., Sandström, Per, Wolff, Niklas, Kienle, Lorenz, Scipioni, Larry, Greer, James, von Hauff, Elizabeth, Hultman, Lars, Birch, Jens, Hsiao, Ching-Lien
Publikováno v:
In Vacuum February 2024 220
The thermodynamic stability of germanium tin $\mathrm{Ge_{1-x}Sn_x}$ alloys is investigated across the composition range $0 \le x \le 1$ by applying density functional theory (DFT) together with the cluster expansion formalism (CE). It is known that
Externí odkaz:
http://arxiv.org/abs/1904.09147
Publikováno v:
Phys. Rev. Materials 3, 065002 (2019)
The structure of thin terminated Bi(1 1 1) films of approximately 1 nm thickness is investigated from first principles. Our density functional theory calculations show that covalent bonds to the surface can change the orientation of the films complet
Externí odkaz:
http://arxiv.org/abs/1903.12654
Autor:
Razavi, Pedram, Greer, James C.
Publikováno v:
Solid-State Electronics, Volume 149, November 2018, Pages 6-14
The impact of uni-axial compressive and tensile strain and diameter on the electronic band structure of indium arsenide (InAs) nanowires (NWs) is investigated using first principles calculations. Effective masses and band gaps are extracted from the
Externí odkaz:
http://arxiv.org/abs/1808.05418