Zobrazeno 1 - 10
of 994
pro vyhledávání: '"Greer, James A."'
Autor:
Wittmann, Angela, Gomonay, Olena, Litzius, Kai, Kaczmarek, Allison, Kossak, Alexander E., Wolf, Daniel, Lubk, Axel, Johnson, Tyler N., Tremsina, Elizaveta A., Churikova, Alexandra, Büttner, Felix, Wintz, Sebastian, Mawass, Mohamad-Assaad, Weigand, Markus, Kronast, Florian, Scipioni, Larry, Shepard, Adam, Newhouse-Illig, Ty, Greer, James A, Schütz, Gisela, Birge, Norman O., Beach, Geoffrey S. D.
Antiferromagnets have recently been propelled to the forefront of spintronics by their high potential for revolutionizing memory technologies. For this, understanding the formation and driving mechanisms of the domain structure is paramount. In this
Externí odkaz:
http://arxiv.org/abs/2210.16141
Publikováno v:
In Fire Safety Journal June 2024 146
Publikováno v:
2021 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA), 2021, pp. 1-2
We present quantum simulations of carbon nanotube field-effect transistors (CNT-FETs) based on top-gated architectures and compare to electrical characterization on devices with 15 nm channel lengths. A non-equilibrium Green's function (NEGF) quantum
Externí odkaz:
http://arxiv.org/abs/2108.07013
Publikováno v:
Phys. Rev. B 104, 045432 (2021)
The passivation of thin Bi(1 1 1) films with hydrogen and oxide capping layers is investigated from first principles. Considering termination-related changes of the crystal structure, we show how the bands and density of states are affected. In the c
Externí odkaz:
http://arxiv.org/abs/2104.07998
Autor:
COLLINS, BRENDA
Publikováno v:
Irish Economic and Social History, 2003 Jan 01. 30, 153-155.
Externí odkaz:
https://www.jstor.org/stable/24339014
Publikováno v:
Phys. Rev. B 104, 035127 (2021)
The electronic band structure of Bi is calculated using state of the art electronic structure methods, including density functional theory and G$_0$W$_0$ quasiparticle approximations. The delicate ordering of states at the L point of the Brillouin zo
Externí odkaz:
http://arxiv.org/abs/2102.02018
We calculate the electronic structure of germanium-tin (Ge$_{1-x}$Sn$_{x}$) binary alloys for $0 \leq x \leq 1$ using density functional theory (DFT). Relaxed alloys with semiconducting or semimetallic behaviour as a function of Sn composition $x$ ar
Externí odkaz:
http://arxiv.org/abs/2012.11311
Autor:
Parker, Rick
Publikováno v:
NACTA Journal, 2000 Mar 01. 44(1), 57-57.
Externí odkaz:
https://www.jstor.org/stable/43766799
Autor:
Pingen, Katrin, Hinz, Alexander M., Sandström, Per, Wolff, Niklas, Kienle, Lorenz, Scipioni, Larry, Greer, James, von Hauff, Elizabeth, Hultman, Lars, Birch, Jens, Hsiao, Ching-Lien
Publikováno v:
In Vacuum February 2024 220
The thermodynamic stability of germanium tin $\mathrm{Ge_{1-x}Sn_x}$ alloys is investigated across the composition range $0 \le x \le 1$ by applying density functional theory (DFT) together with the cluster expansion formalism (CE). It is known that
Externí odkaz:
http://arxiv.org/abs/1904.09147