90 GHz amplifier fabricated by a low cost PHEMT technology

Autor: Werthof, A., Grave, T., Kellner, W.

Publikováno v: Werthof, A. ; Grave, T. ; Kellner, W. (1999) 90 GHz amplifier fabricated by a low cost PHEMT technology. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.

A medium power W-band amplifier has been designed and fabricated using a low cost production oriented PHEMT technology which is based only on optical stepper lithography. The 3-stage amplifier utilizes coplanar transmission lines which results in a c

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::436bb79590cbb25609bf1cb1cddf6d82
http://amsacta.unibo.it/1415/

Influence of backside doping on the nonlinear capacitances of a PHEMT affecting the VCO frequency characteristics.

Autor: Brech, H., Grave, T., Werthof, A., Siweris, H.-J., Simlinger, T., Selberherr, S.

Publikováno v: Compound Semiconductors 1997 Proceedings of the IEEE Twenty-Fourth International Symposium on Compound Semiconductors; 1998, p495-498, 4p

Electroluminescence analysis of multiplication effects in pseudomorphic HEMT’s

Autor: Meneghesso, Gaudenzio, Grave, T., Manfredi, M., Pavesi, M., Canali, C., Zanoni, Enrico

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=od______3657::5d5c777a1401b1283e2d0bc80f0426fd
http://hdl.handle.net/11577/2523034

A 38/76 GHz automotive radar chip set fabricated by a low cost PHEMT technology.

Autor: Werthof, A., Siweris HJ, Tischer, H., Liebl, W., Jaeger, G., Grave, T.

Publikováno v: 2002 IEEE MTT-S International Microwave Symposium Digest (Cat. No.02CH37278); 2002, p1855-1858, 4p

A mixed Si and GaAs chip set for millimeter-wave automotive radar front-ends.

Autor: Siweris, H.J., Werthof, A., Tischer, H., Grave, T., Werthmann, H., Rasshofer, R.H., Kellner, W.

Publikováno v: 2000 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium Digest of Papers (Cat. No.00CH37096); 2000, p191-194, 4p