Role of electron and ion irradiation in a reliable lift-off process with e-beam evaporation and a bilayer PMMA resist system

Autor: Sun, Bin, Grap, Thomas, Frahm, Thorben, Scholz, Stefan, Knoch, Joachim

Publikováno v: Journal of Vacuum Science & Technology B 39, 052601 (2021)

This paper addresses issues related to cracking and blisters in deposited films encountered in a lift-off process with electron beam evaporation and a bilayer PMMA resist system. The impact of charged particles, i.e. electrons and ions, is investigat

Externí odkaz: http://arxiv.org/abs/2104.12452

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Herstellung von Multi-Gate-Strukturen zur Realisierung von elektrostatisch konfigurierbaren Bauelementen

Autor: Grap, Thomas

Publikováno v: Aachen 1 Online-Ressource (iii, 144 Seiten) (2017). doi:10.18154/RWTH-2018-00813 = Dissertation, Rheinisch-Westfälische Technische Hochschule Aachen, 2017

Dissertation, RWTH Aachen, 2017; 1 Online-Ressource (iii, 144 Seiten) (2018). = Dissertation, RWTH Aachen, 2017
In recent years, alternative concepts have been developed for field effect transistors, which allow further performance enhancement f

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::248d916c74a0ffa4d520b4241b7843b4

Selective area growth and stencil lithography for in situ fabricated quantum devices

Autor: Schüffelgen, Peter, Rosenbach, Daniel, Li, Chuan, Schmitt, Tobias, Schleenvoigt, Michael, Jalil, Abdur, Schmitt, Sarah, Kölzer, Jonas, Wang, Meng, Bennemann, Benjamin, Parlak, Umut, Kibkalo, Lidia, Trellenkamp, Stefan, Grap, Thomas, Meertens, Doris, Luysberg, Martina, Mussler, Gregor, Berenschot, Erwin, Tas, Niels, Golubov, Alexander, Brinkman, Alexander, Schäpers, Thomas, Grützmacher, Detlev

Publikováno v: Nature Nanotechnology; September 2019, Vol. 14 Issue: 9 p825-831, 7p

Gate-controlled doping in carbon-based FETs.

Autor: Knoch, Joachim, Grap, Thomas, Muller, Marcel

Publikováno v: 2013 IFIP/IEEE 21st International Conference on Very Large Scale Integration (VLSI-SoC); 2013, p162-167, 6p