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Grange, John David
This thesis describes a study of the growth and doping of single crystal thin films of GaAs and InAs by the technique of molecular beam epitaxy (MBE). One micron thick unintentionally doped films of InAs were deposited onto GaAs substrates at the rel
Externí odkaz:
https://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.256299
