Zobrazeno 1 - 10
of 351
pro vyhledávání: '"Grahn, H T"'
Autor:
Auzelle, T., Azadmand, M., Flissikowski, T., Ramsteiner, M., Morgenroth, K., Stemmler, C., Fernández-Garrido, S., Sanguinetti, S., Grahn, H. T., Geelhaar, L., Brandt, O.
GaN nanowires grown by molecular beam epitaxy generally suffer from dominant nonradiative recombination, which is believed to originate from point defects. To suppress the formation of these defects, we explore the synthesis of GaN nanowires at tempe
Externí odkaz:
http://arxiv.org/abs/2001.06387
Autor:
Sinito, C., Corfdir, P., Pfüller, C., Gao, G., Vílchez, J. Bartolomé, Kölling, S., Doblado, A. Rodil, Jahn, U., Lähnemann, J., Auzelle, T., Zettler, J. K., Flissikowski, T., Koenraad, P., Grahn, H. T., Geelhaar, L., Fernández-Garrido, S., Brandt, O.
Publikováno v:
Nano Letters 19, 5938 (2019)
Several of the key issues of planar (Al,Ga)N-based deep-ultraviolet light emitting diodes could potentially be overcome by utilizing nanowire heterostructures, exhibiting high structural perfection and improved light extraction. Here, we study the sp
Externí odkaz:
http://arxiv.org/abs/1905.04090
Autor:
Feix, F., Flissikowski, T., Sabelfeld, K. K., Kaganer, V. M., Wölz, M., Geelhaar, L., Grahn, H. T., Brandt, O.
Publikováno v:
Phys. Rev. Applied 8, 014032 (2017)
We investigate the radiative and nonradiative recombination processes in planar (In,Ga)N/GaN(0001) quantum wells and (In,Ga)N quantum disks embedded in GaN$(000\bar{1})$ nanowires using photoluminescence spectroscopy under both continuous-wave and pu
Externí odkaz:
http://arxiv.org/abs/1703.06715
Autor:
Corfdir, P., Hauswald, C., Marquardt, O., Flissikowski, T., Zettler, J. K., Fernández-Garrido, S., Geelhaar, L., Grahn, H. T., Brandt, O.
Publikováno v:
Phys. Rev. B 93, 115305 (2016)
We study the nature of excitons bound to I1 basal plane stacking faults in ensembles of ultrathin GaN nanowires by continuous-wave and time-resolved photoluminescence spectroscopy. These ultrathin nanowires, obtained by the thermal decomposition of s
Externí odkaz:
http://arxiv.org/abs/1601.01162
Autor:
Corfdir, P., Hauswald, C., Zettler, J. K., Flissikowski, T., Lähnemann, J., Fernández-Garrido, S., Geelhaar, L., Grahn, H. T., Brandt, O.
Publikováno v:
Phys. Rev. B 90, 195309 (2014)
We investigate the nature of excitons bound to I1 basal-plane stacking faults [(I1;X)] in GaN nanowire ensembles by continuous-wave and time-resolved photoluminescence spectroscopy. Based on the linear increase of the radiative lifetime of these exci
Externí odkaz:
http://arxiv.org/abs/1408.5263
Publikováno v:
Journal of Physics A: Math. Theor. 44 (2011) 395003 (19pp)
Undoped and strongly photoexcited semiconductor superlattices with field-dependent recombination behave as excitable or oscillatory media with spatially discrete nonlinear convection and diffusion. Infinitely long, dc-current-biased superlattices beh
Externí odkaz:
http://arxiv.org/abs/1109.6855
Publikováno v:
Phys. Rev. B 81, 035322 (2010) (8 pages)
A model for charge transport in undoped, photo-excited semiconductor superlattices, which includes the dependence of the electron-hole recombination on the electric field and on the photo-excitation intensity through the field-dependent recombination
Externí odkaz:
http://arxiv.org/abs/0912.4897
Autor:
Kastrup, J., Hey, R., Ploog, K. H., Grahn, H. T., Bonilla, L. L., Kindelan, M., Moscoso, M., Wacker, A.
Publikováno v:
Phys. Rev. B 55, 2476 (1997)
Tunable oscillatory modes of electric-field domains in doped semiconductor superlattices are reported. The experimental investigations demonstrate the realization of tunable, GHz frequencies in GaAs-AlAs superlattices covering the temperature region
Externí odkaz:
http://arxiv.org/abs/cond-mat/9707246
Akademický článek
Tento výsledek nelze pro nepřihlášené uživatele zobrazit.
K zobrazení výsledku je třeba se přihlásit.
K zobrazení výsledku je třeba se přihlásit.
Akademický článek
Tento výsledek nelze pro nepřihlášené uživatele zobrazit.
K zobrazení výsledku je třeba se přihlásit.
K zobrazení výsledku je třeba se přihlásit.