Zobrazeno 1 - 10
of 11
pro vyhledávání: '"Graham R. Wolstenholme"'
Publikováno v:
Microelectronic Engineering. 19:253-256
In this paper a novel isolation scheme for implementation in alternate metal virtual ground (AMG) EPROM and Flash EEPROM arrays is described. It is shown that, unlike the conventional LOCOS isolation, the new isolation scheme allows the AMO concept t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bd5a8098c6faedf9697dfcd5a683b4f9
https://doi.org/10.1016/0167-9317(92)90432-q
https://doi.org/10.1016/0167-9317(92)90432-q
Autor:
Hosam Haggag, L. Anderson, D. Wenzbauer, P. Nielsen, M. Randolph, J. Beckett, R. Irani, Albert Bergemont, B. Eitan, W. Breinholt, J. Diroll, E. Shacham, L. Hoang, R. Salter, A. Kablanian, S. Pearce, Graham R. Wolstenholme, J. Barrell, R. Kazerounian
Publikováno v:
1993 International Symposium on VLSI Technology, Systems, and Applications Proceedings of Technical Papers.
The alternate metal virtual ground (AMG) has recently been introduced as a scaling concept for an EPROM array. The AMG cell size in a 0.8 mu m technology (2.56 mu m/sup 2/) is smaller than the cell size on a conventional architecture implemented in a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::637af557c48c9648dabb64bcda822c7e
https://doi.org/10.1109/vtsa.1993.263675
https://doi.org/10.1109/vtsa.1993.263675
Publikováno v:
Proceedings of IEEE International Electron Devices Meeting.
A new NOR virtual ground flash cell array concept is introduced. A 2.4 um/sup 2/ cell size based on a 0.5 um process is realized, which is a 35% cell size reduction compared with the conventional NOR cell. >
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6e0c8b5c0c8d8e7b7d32faa8c870d2ff
https://doi.org/10.1109/iedm.1993.347409
https://doi.org/10.1109/iedm.1993.347409
Publikováno v:
Proceedings of 1994 IEEE International Conference on Microelectronic Test Structures.
In this paper a novel and simple but effective stacked gate etch test structure, specific to the requirements of of non-volatile memories, used for the early stages of process development and monitoring of a 0.5 /spl mu/m high density FLASH process i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d92ccb3ae21814af5504441acd6e7ef3
https://doi.org/10.1109/icmts.1994.303496
https://doi.org/10.1109/icmts.1994.303496
Autor:
P. Nielson, A. Kablanian, B. Eitan, E. Shacham, J. Perry, R. B. Sethi, K. Chhor, M. Shamay, G.A. Rezvani, Graham R. Wolstenholme, H. Gaffur, P. Kauk, R. Kazerounian, Hosam Haggag, L. Anderson, R. Irani, Albert Bergemont, Anirban Roy
Publikováno v:
International Electron Devices Meeting 1991 [Technical Digest].
The alternate metal virtual ground EPROM array (AMG) is introduced as a new scaling concept. This array dramatically reduces cell size by making poly pitch the only limitation in both X and Y directions. The AMG concept scales cell size by sharing on
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0ba28319e860137932fd0ca9f626293e
https://doi.org/10.1109/iedm.1991.235441
https://doi.org/10.1109/iedm.1991.235441
Publikováno v:
ESSDERC '92: 22nd European Solid State Device Research conference; 1992, p253-256, 4p
Autor:
Cacharelis, Philip J, Hart, Michael J, Wolstenholme, Graham R, Carpenter, Roger D, Johnson, Ian F, Manley, Martin H
Publikováno v:
ESSDERC '90: 20th European Solid State Device Research Conference; 1990, p547-550, 4p
Publikováno v:
IEEE Transactions on Electron Devices; 1992, Vol. 39 Issue 7, p1717-1731, 15p
Publikováno v:
IEEE Transactions on Electron Devices; 1988, Vol. 35 Issue 11, p1915-1923, 9p
Publikováno v:
IEEE Transactions on Electron Devices; 1988, Vol. 35 Issue 11, p1902-1908, 7p