Zobrazeno 1 - 9
of 9
pro vyhledávání: '"Graham John Pryce"'
Autor:
T. M. Burke, Alfred R. Adams, Graham John Pryce, C. R. Pidgeon, Ben Murdin, Timothy Ashley, Aleksey D. Andreev, Eoin P. O'Reilly
Publikováno v:
Solid-State Electronics. 47:387-394
Indium antimonide (InSb) has the smallest energy gap of any of the binary III–V materials, leading to a cut-off wavelength of 7 μm at 300 K. The addition of small proportions of nitrogen to InSb offers the prospect of extending the response wavele
Autor:
Graham John Pryce, A. D. Johnson, T. Ashley, Charles Thomas Elliott, J A Beswick, R. Jefferies
Publikováno v:
IEE Proceedings - Optoelectronics. 145:265-267
Diode lasers with an In/sub 0.948/Al/sub 0.052/Sb gain region have been grown by molecular beam epitaxy onto nominally matched InGaSb substrates, and onto mismatched InSb substrates. The former had a stimulated emission wavelength of 3.9 /spl mu/m at
Autor:
Jean Giess, Colin J. Hollier, Andrew John Wright, Neil Gordon, Mark Anthony Crouch, John W. Cairns, Alan J. Hydes, David J. Hall, Janet E. Hails, Timothy Ashley, David J. Lees, Andrew Graham, Louise Buckle, Graham John Pryce
Publikováno v:
SPIE Proceedings.
The standard process for manufacturing mercury cadmium telluride (MCT) infrared focal plane arrays (FPAs) involves hybridising detectors onto a readout integrated circuit (ROIC). Wafer scale processing is used to fabricate both the detector arrays an
Autor:
Tim Ashley, Harvey R. Hardaway, M. T. Emeny, Graeme Masterton, Louise Buckle, Graham John Pryce
Publikováno v:
Infrared Detector Materials and Devices.
We have developed a range of un-cooled mid-IR LEDs and photodiodes for IR gas sensing applications. Varying the composition of MBE grown Indium Aluminium Antimonide (In (1-x) Al x Sb) epi-layers on GaAs allows us to engineer the emission/detection wa
Autor:
T. M. Burke, Alexi D. Andreev, Eoin P. O'Reilly, Tim Ashley, Alfred R. Adams, Graham John Pryce, P. Blood
Publikováno v:
SPIE Proceedings.
We report the growth by molecular beam epitaxy (MBE) of InAlSb/InSb superlattice structures to investigate their potential for reducing the Auger recombination and intervalence absorption effects, which currently limit the maximum operating temperatu
Autor:
Neil Gordon, Graham John Pryce, J A Beswick, Chang H. Wang, David T. Dutton, A. D. Johnson, C. D. Maxey, Charles Thomas Elliott, Tim Ashley, J. G. Crowder
Publikováno v:
Light-Emitting Diodes: Research, Manufacturing, and Applications II.
We describe uncooled mid-IR light emitting and negative luminescent diodes made form indium antimonide based III-V compounds, and long wavelength devices made from mercury cadmium telluride. The application of these devices to gas sensing, improved t
Publikováno v:
Electronics Letters. 36:1867
The authors report the application of room-temperature InSb/InAlSb LED and photodiode devices to the detection of nitrogen dioxide (NO2) using infrared absorption at a wavelength of 6 µm. With the photodiodes minimally cooled to –20°C for improve
Autor:
Graham John Pryce, Volker Paul Mannheim, S.D. Smith, A. D. Johnson, David T. Dutton, Changhai Wang, T. Ashley, J. G. Crowder
Publikováno v:
Electronics Letters. 34:300
The authors report trace gas detection of nitrogen dioxide (NO/sub 2/) using a room temperature operation InSb LED and an infrared absorption technique. A gas growth characteristic has been obtained for an 11 cm long gas cell containing a light pipe
Autor:
Graham John Pryce, C. R. Pidgeon, B. N. Murdin, R. T. Kotitschke, Eoin P. O'Reilly, C J G M Langerak, A. R. Hollingworth, P. C. Findlay, C.T. Elliott, Alf R. Adams, T. Ashley
Publikováno v:
Scopus-Elsevier
Heriot-Watt University
Heriot-Watt University
Measurements of the light-current characteristics of bulk InSb on InSb and InAlSb on InSb lasers, emitting at 5.1 μm at 77K, have been made in the temperature range from 4.2 to 110K. For the alloy device the authors find values of the characteristic
Externí odkaz:
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