Zobrazeno 1 - 5
of 5
pro vyhledávání: '"Grachik H. Avetisyan"'
Autor:
I. V. Budkin, Vladimir B. Kulikov, Igor Dmitrievich Zalevsky, L. M. Vasilevskaya, Grachik H. Avetisyan, A A Padalitsa
Publikováno v:
SPIE Proceedings.
The success in the area of multiple quantum well (MQW) devices development have been achieved mainly dueto employment ofmolecular beam epitaxy (MBE). However at the same time for MQW growing metalorganic chemicalvapor deposition (MOCVD) is used, beca
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::42374943de60738bb2fcf477a061406b
https://doi.org/10.1117/12.517307
https://doi.org/10.1117/12.517307
Autor:
Vladimir M. Trubnikov, Yuri A. Kuznetsov, Vladimir B. Kulikov, Alexej K. Erkin, Vitalij P. Kotov, Grachik H. Avetisyan
Publikováno v:
Third Conference on Photonic Systems for Ecological Monitoring.
The paper presents the findings of an investigation into some characteristics of an X-ray imager. The imager is an assembly of modules, each incorporating a linear array of GaAs detectors connected electrically to a CCD multiplexer. The X-ray imager
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7722c8a67b2fea33a006df22d8586762
https://doi.org/10.1117/12.284727
https://doi.org/10.1117/12.284727
Autor:
Peter V. Bulaev, A A Padalitsa, Vitalij P. Kotov, Igor Dmitrievich Zalevsky, Grachik H. Avetisyan, Vladimir Alekseevic Gorbylev, Vladimir B. Kulikov
Publikováno v:
Third Conference on Photonic Systems for Ecological Monitoring.
Low Pressure Metalorganic Chemical Vapor Deposition (LP MOCVD) epitaxial growth of InAs0.85Sb0.15 p-i-n structures for infrared photodetectors arrays is reported. Monocrystalline epitaxial layers of InAsSb were grown on semi-insulating GaAs wafers. M
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::06ce337d3660ae88d55c1f8c753619d6
https://doi.org/10.1117/12.284739
https://doi.org/10.1117/12.284739
Publikováno v:
SPIE Proceedings.
In this paper the epitaxial growth of n-i-p-i-InAs structures for infrared photodetectors with sensitivity in region (3-5) mkm grown by low pressure metal organic chemical vapor deposition (LP-MOCVD) have been represented. Experimental results: spect
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fe715b7c0ca0aa3194dc8c107be43067
https://doi.org/10.1117/12.238399
https://doi.org/10.1117/12.238399
Autor:
A. F. Plotnikov, Igor Dmitrievich Zalevsky, Grachik H. Avetisyan, Vladimir B. Kulikov, Vladimir V. Kovalevsky
Publikováno v:
SPIE Proceedings.
The possibility of quantum efficiency enhancement in GaAs/AlGaAs quantum well infrared photodetectors (QWIP) by means of waveguide propagation of radiation in superlattice is investigated in this paper. Epitaxial structures for photodetector manufact
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5e9c49da42fb6fffa4fe136b225b0821
https://doi.org/10.1117/12.238387
https://doi.org/10.1117/12.238387