Zobrazeno 1 - 10
of 142
pro vyhledávání: '"Goykhman, Ilya"'
Autor:
Oz, Dor, Suleymanov, Nathan, Minkovich, Boris, Kostianovskii, Vladislav, Gantz, Liron, Polyushkin, Dmitry, Mueller, Thomas, Goykhman, Ilya
Thermal tuning of the optical refractive index in the waveguides to control light phase accumulation is essential in photonic integrated systems and applications. In silicon photonics, microheaters are mainly realized by metal wires or highly doped s
Externí odkaz:
http://arxiv.org/abs/2302.09279
Autor:
Mišeikis, Vaidotas, Marconi, Simone, Giambra, Marco A., Montanaro, Alberto, Martini, Leonardo, Fabbri, Filippo, Pezzini, Sergio, Piccinini, Giulia, Forti, Stiven, Terrés, Bernat, Goykhman, Ilya, Hamidouche, Louiza, Legagneux, Pierre, Sorianello, Vito, Ferrari, Andrea C., Koppens, Frank H. L., Romagnoli, Marco, Coletti, Camilla
Publikováno v:
ACS Nano 14, 11190 (2020)
We report compact, scalable, high-performance, waveguide integrated graphene-based photodetectors (GPDs) for telecom and datacom applications, not affected by dark current. To exploit the photothermoelectric (PTE) effect, our devices rely on a graphe
Externí odkaz:
http://arxiv.org/abs/2009.05301
Autor:
Schuler, Simone, Muench, Jakob E., Ruocco, Alfonso, Balci, Osman, van Thourhout, Dries, Sorianello, Vito, Romagnoli, Marco, Watanabe, Kenji, Taniguchi, Takashi, Goykhman, Ilya, Ferrari, Andrea C., Mueller, Thomas
Graphene integrated photonics provides several advantages over conventional Si photonics. Single layer graphene (SLG) enables fast, broadband, and energy-efficient electro-optic modulators, optical switches and photodetectors (GPDs), and is compatibl
Externí odkaz:
http://arxiv.org/abs/2007.03044
Autor:
Nagli, Michael, Moisseev, Ron, Suleymanov, Nathan, Kaminski, Eitan, Hazan, Yoav, Gelbert, Gil, Goykhman, Ilya, Rosenthal, Amir
Publikováno v:
In Photoacoustics August 2023 32
Autor:
Orchin, Gavin J., De Fazio, Domenico, Di Bernardo, Angelo, Hamer, Matthew, Yoon, Duhee, Cadore, Alisson R., Goykhman, Ilya, Watanabe, Kenji, Taniguchi, Takashi, Robinson, Jason W. A., Gorbachev, Roman V., Ferrari, Andrea C., Hadfield, Robert H.
We report the photoresponse of niobium diselenide (NbSe$_2$), a transition metal dichalcogenide (TMD) which exhibits superconducting properties down to a single layer. Devices are built by using micro-mechanically cleaved 2 to 10 layers and tested un
Externí odkaz:
http://arxiv.org/abs/1903.02528
Autor:
Javerzac-Galy, Clément, Kumar, Anshuman, Schilling, Ryan D., Piro, Nicolas, Khorasani, Sina, Barbone, Matteo, Goykhman, Ilya, Khurgin, Jacob B., Ferrari, Andrea C., Kippenberg, Tobias J.
Publikováno v:
Nano Letters 18 (5), 3138-3146 (2018)
We present quantum yield measurements of single layer $\textrm{WSe}_2$ (1L-$\textrm{WSe}_2$) integrated with high-Q ($Q>10^6$) optical microdisk cavities, using an efficient ($\eta>$90%) near-field coupling scheme based on a tapered optical fiber. Co
Externí odkaz:
http://arxiv.org/abs/1710.04294
Akademický článek
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Autor:
Berraquero, Carmen Palacios, Barbone, Matteo, Kara, Dhiren M., Chen, Xiaolong, Goykhman, Ilya, Yoon, Duhee, Ott, Anna K., Beitner, Jan, Watanabe, Kenji, Taniguchi, Takashi, Ferrari, Andrea C., Atatüre, Mete
Transition metal dichalcogenides (TMDs) are optically active layered materials providing potential for fast optoelectronics and on-chip photonics. We demonstrate electrically driven single-photon emission from localised sites in tungsten diselenide (
Externí odkaz:
http://arxiv.org/abs/1603.08795
Autor:
Goykhman, Ilya, Sassi, Ugo, Desiatov, Boris, Mazurski, Noa, Milana, Silvia, de Fazio, Domenico, Eiden, Anna, Khurgin, Jacob, Shappir, Joseph, Levy, Uriel, Ferrari, Andrea C.
Publikováno v:
Nano Lett. 16, 3005 (2016)
We report an on-chip integrated metal-graphene-silicon plasmonic Schottky photodetector with 85mA/W responsivity at 1.55 um and 7% internal quantum efficiency. This is one order of magnitude higher than metal-silicon Schottky photodetectors operated
Externí odkaz:
http://arxiv.org/abs/1512.08153
Plasmonic enhanced Schottky detectors operating on the basis of the internal photoemission process are becoming an attractive choice for detecting photons with sub bandgap energy. Yet, the quantum efficiency of these detectors appears to be low compa
Externí odkaz:
http://arxiv.org/abs/1401.2624