Zobrazeno 1 - 10
of 245
pro vyhledávání: '"Goykhman, I"'
Autor:
Akhavan, S., Najafabadi, A. Taheri, Mignuzzi, S., Jalebi, M. Abdi, Ruocco, A., Paradisanos, I., Balci, O., Andaji-Garmaroudi, Z., Goykhman, I., Occhipinti, L. G., Lidorikis, E., Stranks, S. D., Ferrari, A. C.
The integration of optoelectronic devices, such as transistors and photodetectors (PDs), into wearables and textiles is of great interest for applications such as healthcare and physiological monitoring. These require flexible/wearable systems adapta
Externí odkaz:
http://arxiv.org/abs/2311.11450
Autor:
Cadore, A. R., Rosa, B. L. T., Paradisanos, I., Mignuzzi, S., De Fazio, D., Alexeev, E. M., Muench, J. E., Kakavelakis, G., Shinde, S. M., Yoon, D., Tongay, S., Watanabe, K., Taniguchi, T., Lidorikis, E., Goykhman, I., Soavi, G., Ferrari, A. C.
Publikováno v:
Phys. Rev B 108, 035420 (2023)
Layered material heterostructures (LMHs) can be used to fabricate electroluminescent devices operating in the visible spectral region. A major advantage of LMH-light emitting diodes (LEDs) is that electroluminescence (EL) emission can be tuned across
Externí odkaz:
http://arxiv.org/abs/2305.01791
Autor:
Muench, J. E., Ruocco, A., Giambra, M. A., Miseikis, V., Zhang, D., Wang, J., Watson, H. F. Y., Park, G. C., Akhavan, S., Sorianello, V., Midrio, M., Tomadin, A., Coletti, C., Romagnoli, M., Ferrari, A. C., Goykhman, I.
Publikováno v:
Nano Lett 19, 7632 (2019)
We present a micrometer scale, on-chip integrated, plasmonic enhanced graphene photodetector (GPD) for telecom wavelengths operating at zero dark current. The GPD is designed and optimized to directly generate a photovoltage and has an external respo
Externí odkaz:
http://arxiv.org/abs/1905.04639
Autor:
De Fazio, D., Purdie, D. G., Ott, A. K., Braeuninger-Weimer, P., Khodkov, T., Goossens, S., Taniguchi, T., Watanabe, K., Livreri, P., Koppens, F. H. L., Hofmann, S., Goykhman, I., Ferrari, A. C., Lombardo, A.
We report high room-temperature mobility in single layer graphene grown by Chemical Vapor Deposition (CVD) after wet transfer on SiO$_2$ and hexagonal boron nitride (hBN) encapsulation. By removing contaminations trapped at the interfaces between sin
Externí odkaz:
http://arxiv.org/abs/1904.01405
Akademický článek
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Publikováno v:
2d Materials 5, 045028 (2018)
Resistive-switching memories are alternative to Si-based ones, which face scaling and high power consumption issues. Tetrahedral amorphous carbon (ta-C) shows reversible, non-volatile resistive switching. Here we report polarity independent ta-C resi
Externí odkaz:
http://arxiv.org/abs/1805.02100
Autor:
Soavi, G., Wang, G., Rostami, H., Purdie, D., De Fazio, D., Ma, T., Luo, B., Wang, J., Ott, A. K., Yoon, D., Bourelle, S., Muench, J. E., Goykhman, I., Conte, S. Dal, Celebrano, M., Tomadin, A., Polini, M., Cerullo, G., Ferrari, A. C.
Publikováno v:
Nature Nanotechnologyvolume 13, 583 (2018)
Optical harmonic generation occurs when high intensity light ($>10^{10}$W/m$^{2}$) interacts with a nonlinear material. Electrical control of the nonlinear optical response enables applications such as gate-tunable switches and frequency converters.
Externí odkaz:
http://arxiv.org/abs/1710.03694
Autor:
Casalino, M., Sassi, U., Goykhman, I., Eiden, A., Lidorikis, E., Milana, S., De Fazio, D., Tomarchio, F., Iodice, M., Coppola, G., Ferrari, A. C.
Publikováno v:
ACS Nano 11, 10955 (2017)
We report vertically-illuminated, resonant cavity enhanced, graphene-Si Schottky photodetectors (PDs) operating at 1550nm. These exploit internal photoemission at the graphene-Si interface. To obtain spectral selectivity and enhance responsivity, the
Externí odkaz:
http://arxiv.org/abs/1708.07102
Autor:
Sorianello, V., Midrio, M., Contestabile, G., Asselberg, I., Van Campenhout, J., Huyghebaerts, C., Goykhman, I., Ott, A. K., Ferrari, A. C., Romagnoli, M.
Publikováno v:
Nature Photonics, 12, 40 (2018)
We demonstrate a 10Gb/s Graphene Phase Modulator (GPM) integrated in a Mach-Zehnder interferometer configuration. This is a compact device, with a phase-shifter length of only 300$\mu$m, and 35dB extinction ratio. The GPM has modulation efficiency of
Externí odkaz:
http://arxiv.org/abs/1704.01525
Autor:
Tielrooij, K. J., Hesp, N. C. H., Principi, A., Lundeberg, M., Pogna, E. A. A., Banszerus, L., Mics, Z., Massicotte, M., Schmidt, P., Davydovskaya, D., Purdie, D. G., Goykhman, I., Soavi, G., Lombardo, A., Watanabe, K., Taniguchi, T., Bonn, M., Turchinovich, D., Stampfer, C., Ferrari, A. C., Cerullo, G., Polini, M., Koppens, F. H. L.
Publikováno v:
Nature Nanotechnology 13, 41-46 (2018)
Van der Waals heterostructures have emerged as promising building blocks that offer access to new physics, novel device functionalities, and superior electrical and optoelectronic properties. Applications such as thermal management, photodetection, l
Externí odkaz:
http://arxiv.org/abs/1702.03766