Zobrazeno 1 - 10
of 171
pro vyhledávání: '"Govind Rajan"'
Publikováno v:
JACS Au, Vol 4, Iss 8, Pp 2862-2873 (2024)
Externí odkaz:
https://doaj.org/article/c1d344d8e3ab46baa7d3fd3f9e08bd6b
Autor:
Govind Rajan, Ananth.
This electronic version was submitted by the student author. The certified thesis is available in the Institute Archives and Special Collections.
Thesis: Ph. D., Massachusetts Institute of Technology, Department of Chemical Engineering, 2019
Thesis: Ph. D., Massachusetts Institute of Technology, Department of Chemical Engineering, 2019
Externí odkaz:
https://hdl.handle.net/1721.1/121706
Publikováno v:
ACS Engineering Au, Vol 4, Iss 3, Pp 293-294 (2024)
Externí odkaz:
https://doaj.org/article/29dc56320904437f81a5a56b680f2ca9
Publikováno v:
In Current Opinion in Electrochemistry December 2022 36
Autor:
Govind Rajan, Ananth
Publikováno v:
Journal of Physical Chemistry Letters; 9/12/2024, Vol. 15 Issue 36, p9263-9271, 9p
Akademický článek
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Autor:
Govind Rajan, Ananth
Publikováno v:
Journal of Chemical Education; 6/11/2024, Vol. 101 Issue 6, p2448-2457, 10p
Autor:
Sayan Bhowmik, Ananth Govind Rajan
Publikováno v:
iScience, Vol 25, Iss 3, Pp 103832- (2022)
Summary: Chemical vapor deposition (CVD) is extensively used to produce large-area two-dimensional (2D) materials. Current research is aimed at understanding mechanisms underlying the nucleation and growth of various 2D materials, such as graphene, h
Externí odkaz:
https://doaj.org/article/be9c9afa05634ff1b92f4d340065851f
Publikováno v:
Physical Chemistry Chemical Physics (PCCP); 5/28/2024, Vol. 26 Issue 20, p14721-14733, 13p
Autor:
Kumar, Shiv, Govind Rajan, Ananth
Publikováno v:
Journal of Chemical Theory & Computation; 4/23/2024, Vol. 20 Issue 8, p3298-3307, 10p