Zobrazeno 1 - 10
of 562
pro vyhledávání: '"Goux L"'
Autor:
Stuyck, N. I. Dumoulin, Li, R., Godfrin, C., Elsayed, A., Kubicek, S., Jussot, J., Chan, B. T., Mohiyaddin, F. A., Shehata, M., Simion, G., Canvel, Y., Goux, L., Heyns, M., Govoreanu, B., Radu, I. P.
Larger arrays of electron spin qubits require radical improvements in fabrication and device uniformity. Here we demonstrate excellent qubit device uniformity and tunability from 300K down to mK temperatures. This is achieved, for the first time, by
Externí odkaz:
http://arxiv.org/abs/2108.11317
Autor:
Li, R., Stuyck, N. I. Dumoulin, Kubicek, S., Jussot, J., Chan, B. T., Mohiyaddin, F. A., Elsayed, A., Shehata, M., Simion, G., Godfrin, C., Canvel, Y., Ivanov, Ts., Goux, L., Govoreanu, B., Radu, I. P.
Publikováno v:
2020 IEEE International Electron Devices Meeting (IEDM 2020), 38.3.1-38.3.4
We report on a flexible 300 mm process that optimally combines optical and electron beam lithography to fabricate silicon spin qubits. It enables on-the-fly layout design modifications while allowing devices with either n- or p-type ohmic implants, a
Externí odkaz:
http://arxiv.org/abs/2102.03929
Autor:
Belmonte, A., Reale, G., Fantini, A., Radhakrishnan, J., Redolfi, A., Devulder, W., Nyns, L., Kundu, S., Delhougne, R., Goux, L., Kar, G.S.
Publikováno v:
In Solid State Electronics October 2021 184
Autor:
Clima, S., Garbin, D., Devulder, W., Keukelier, J., Opsomer, K., Goux, L., Kar, G.S., Pourtois, G.
Publikováno v:
In Microelectronic Engineering 15 July 2019 215
Autor:
Chen, Z., Belmonte, A., Chen, C.Y., Radhakrishnan, J., Redolfi, A., Kang, J., Goux, L., Kar, G.S.
Publikováno v:
In Microelectronic Engineering 5 July 2017 179:56-59
Autor:
Subhechha, S., Degraeve, R., Roussel, P., Goux, L., Clima, S., De Meyer, K., Van Houdt, J., Kar, G.S.
Publikováno v:
In Microelectronic Engineering 25 June 2017 178:93-97
Publikováno v:
In Microelectronic Engineering 25 June 2017 178:38-41
Publikováno v:
In Solid State Electronics November 2016 125:189-197
Publikováno v:
In Solid State Electronics November 2016 125:198-203
Autor:
Degraeve, R., Fantini, A., Raghavan, N., Goux, L., Clima, S., Govoreanu, B., Belmonte, A., Linten, D., Jurczak, M.
Publikováno v:
In Microelectronic Engineering 1 November 2015 147:171-175