Zobrazeno 1 - 10
of 27
pro vyhledávání: '"Goutham Arutchelvan"'
Autor:
Goutham Arutchelvan, Quentin Smets, Devin Verreck, Zubair Ahmed, Abhinav Gaur, Surajit Sutar, Julien Jussot, Benjamin Groven, Marc Heyns, Dennis Lin, Inge Asselberghs, Iuliana Radu
Publikováno v:
Scientific Reports, Vol 11, Iss 1, Pp 1-11 (2021)
Abstract Two-dimensional semiconducting materials are considered as ideal candidates for ultimate device scaling. However, a systematic study on the performance and variability impact of scaling the different device dimensions is still lacking. Here
Externí odkaz:
https://doaj.org/article/f132e126bb2d4a5abc877181c5dbd890
Autor:
Daniil Marinov, Jean-François de Marneffe, Quentin Smets, Goutham Arutchelvan, Kristof M. Bal, Ekaterina Voronina, Tatyana Rakhimova, Yuri Mankelevich, Salim El Kazzi, Ankit Nalin Mehta, Pieter-Jan Wyndaele, Markus Hartmut Heyne, Jianran Zhang, Patrick C. With, Sreetama Banerjee, Erik C. Neyts, Inge Asselberghs, Dennis Lin, Stefan De Gendt
Publikováno v:
npj 2D Materials and Applications, Vol 5, Iss 1, Pp 1-10 (2021)
Abstract The cleaning of two-dimensional (2D) materials is an essential step in the fabrication of future devices, leveraging their unique physical, optical, and chemical properties. Part of these emerging 2D materials are transition metal dichalcoge
Externí odkaz:
https://doaj.org/article/f7264bb1bbb04927a645eab375c746fc
Autor:
César J. Lockhart de la Rosa, Goutham Arutchelvan, Alessandra Leonhardt, Cedric Huyghebaert, Iuliana Radu, Marc Heyns, Stefan De Gendt
Publikováno v:
APL Materials, Vol 6, Iss 5, Pp 058301-058301-6 (2018)
Ultra-thin MoS2 film doping through surface functionalization with physically adsorbed species is of great interest due to its ability to dope the film without reduction in the carrier mobility. However, there is a need for understanding how the thic
Externí odkaz:
https://doaj.org/article/af28f4d9502c4e30aac03a8193ef5a04
Autor:
Zubair Ahmed, Surajit Sutar, Abhinav Gaur, Iuliana Radu, Dennis Lin, Inge Asselberghs, Marc Heyns, Benjamin Groven, Quentin Smets, Devin Verreck, Goutham Arutchelvan, J. Jussot
Publikováno v:
Scientific Reports, Vol 11, Iss 1, Pp 1-11 (2021)
Scientific Reports
Scientific Reports
Two-dimensional semiconducting materials are considered as ideal candidates for ultimate device scaling. However, a systematic study on the performance and variability impact of scaling the different device dimensions is still lacking. Here we invest
Autor:
S. Paolillo, Guillaume Boccardi, N. Jourdan, Manoj Jaysankar, Zheng Tao, Sylvain Baudot, Geert Mannaert, Juergen Boemmels, T. Hopf, E. Capogreco, Shouhua Wang, Efrain Altamirano, E. Dupuy, Olalla Varela Pedreira, B. Briggs, Thomas Chiarella, Joris Cousserier, Sofie Mertens, Romain Ritzenthaler, Frank Holsteyns, C. Lorant, Goutham Arutchelvan, Ingrid Demonie, Steven Demuynck, K. Kenis, Xiuju Zhou, Anshul Gupta, F. Sebai, D. Radisic, Zsolt Tokei, Erik Rosseel, A. Sepulveda, Naoto Horiguchi, Christel Drijbooms, Antony Premkumar Peter, Haroen Debruyn, Nouredine Rassoul, Bilal Chehab, P. Morin, Boon Teik Chan, Christopher J. Wilson, Katia Devriendt, Noemie Bontemps, Frederic Lazzarino, Paola Favia, Lieve Teugels, D. Yakimets, F. Schleicher, Houman Zahedmanesh, Jerome Mitard, Min-Soo Kim, An De Keersgieter, Sujith Subramanian, Kevin Vandersmissen, Hans Mertens, Eugenio Dentoni Litta, Yong Kong Siew
Publikováno v:
IEEE Transactions on Electron Devices. 67:5349-5354
Buried power rail (BPR) is a key scaling booster for CMOS extension beyond the 5-nm node. This work demonstrates, for the first time, the integration of tungsten (W) BPR lines with Si finFETs. BPR technology requires insertion of metal in the front-e
Autor:
Narendra Parihar, Goutham Arutchelvan, Jacopo Franco, Sylvain Baudot, Ann Opedebeeck, Steven Demuynck, Hiroaki Arimura, Lars-Ake Ragnarsson, Jerome Mitard, Vincent De Heyn, Abdelkarim Mercha
Publikováno v:
2021 IEEE International Integrated Reliability Workshop (IIRW).
Autor:
Inge Asselberghs, Vivek Mootheri, Albert Minj, Dennis Lin, Alessandra Leonhardt, Goutham Arutchelvan, Marc Heyns, Iuliana Radu
Publikováno v:
2021 IEEE International Interconnect Technology Conference (IITC).
Graphene based 2D electrical contacts have been proposed to mitigate the contact resistance bottleneck in 2D material based transistors. In this work, we present a detailed analysis of Ru-graphene and Ni-graphene contacts to 2.1nm thick CVD MoS 2 , w
Autor:
Inge Asselberghs, Iuliana Radu, Alessandra Leonhardt, Michel Houssa, Surajit Sutar, Dennis Lin, Goutham Arutchelvan, Cedric Huyghebaert, Vivek Mootheri, Sreetama Banerjee, Marc Heyns, Marie-Emmanuelle Boulon
Device performance of two dimensional (2D) material based field effect transistors is severely limited by the relatively high contact resistance encountered at the contact-channel interface. Metal-graphene hybrid contacts have been previously used to
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::daafb845d38df9fbde662c7dad4e3fd1
https://lirias.kuleuven.be/handle/123456789/671223
https://lirias.kuleuven.be/handle/123456789/671223
Autor:
Jean-Francois de Marneffe, Ankit Nalin Mehta, Quentin Smets, J.F Zhang, Sreetama Banerjee, Stefan De Gendt, Ekaterina N. Voronina, Tatyana Rakhimova, Pieter-Jan Wyndaele, Markus Heyne, Kristof M. Bal, Daniil Marinov, Dennis Lin, Inge Asselberghs, Goutham Arutchelvan, Yuri A. Mankelevich, Salim El Kazzi, Erik C. Neyts
Publikováno v:
npj 2D Materials and Applications
npj 2D Materials and Applications, Vol 5, Iss 1, Pp 1-10 (2021)
npj 2D Materials and Applications, Vol 5, Iss 1, Pp 1-10 (2021)
The cleaning of two-dimensional (2D) materials is an essential step in the fabrication of future devices, leveraging their unique physical, optical, and chemical properties. Part of these emerging 2D materials are transition metal dichalcogenides (TM
Autor:
E. Dupuy, Steven Brems, Devin Verreck, P. Morin, Cedric Huyghebaert, Goutham Arutchelvan, D. Radisic, Alain Phommahaxay, A. Thiam, Abhinav Gaur, Tom Schram, Matty Caymax, Koen Kennes, Katia Devriendt, Quentin Smets, W. Li, Inge Asselberghs, Thibaut Maurice, Iuliana Radu, Aryan Afzalian, Benjamin Groven, J-F de Marneffe, D. Lin, Daire J. Cott
Publikováno v:
2020 IEEE International Electron Devices Meeting (IEDM).
Double gated WS 2 transistors with gate length down to 18 nm are fabricated in a 300mm Si CMOS fab. By using large statistical data sets and mapping uniformity on full 300mm wafer, we built an integration vehicle where impact of each process step can