Výsledky vyhledávání - "Goutham, Nayak"

A tunable Fabry–Pérot quantum Hall interferometer in graphene

Autor: Corentin Déprez, Louis Veyrat, Hadrien Vignaud, Goutham Nayak, Kenji Watanabe, Takashi Taniguchi, Frédéric Gay, Hermann Sellier, Benjamin Sacépé

Publikováno v: Nature Nanotechnology
Nature Nanotechnology, Nature Publishing Group, 2021, 16, pp.555-562. ⟨10.1038/s41565-021-00847-x⟩
Nature nanotechnology

Electron interferometry with quantum Hall edge channels holds promise for probing and harnessing exotic exchange statistics of non-Abelian anyons. In semiconductor heterostructures, however, quantum Hall interferometry has proven challenging and ofte

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::bb6bd4c13b410fe88f9be705b4a5409e
https://doi.org/10.1038/s41565-021-00847-x

Zobrazit plný text záznamu

Evolution of inter-layer coupling in artificially stacked bilayer MoS2

Autor: Goutham Nayak, Laëtitia Marty, Nedjma Bendiab, Johann Coraux, Aveek Bid, Jaydeep Kumar Basu, Suman Sarkar, Vincent Bouchiat, Julien Renard, H. L. Pradeepa

Publikováno v: Nanoscale Advances
Nanoscale Advances, RSC, 2019, 1 (11), pp.4398-4405. ⟨10.1039/c9na00517j⟩

International audience; In this paper, we show experimentally that for van der Waals heterostructures (vdWh) of atomically-thin materials, the hybridization of bands of adjacent layers is possible only for ultra-clean interfaces. This we achieve thro

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::6f95b94841b7df3dabcba3c4d63f1d31
https://doi.org/10.1039/c9na00517j

Zobrazit plný text záznamu

Anharmonicity in Raman-active phonon modes in atomically thin MoS2

Autor: Nedjma Bendiab, Johann Coraux, Suman Sarkar, Vincent Bouchiat, Laëtitia Marty, Goutham Nayak, Sarthak Das, Indrajit Maity, Aveek Bid, Kausik Majumdar, Manish Jain, Julien Renard, H. L. Pradeepa

Publikováno v: Physical Review B
Physical Review B, American Physical Society, 2020, 101 (20), ⟨10.1103/PhysRevB.101.205302⟩
Physical Review B, American Physical Society, 2020, 101 (20), pp.205302. ⟨10.1103/PhysRevB.101.205302⟩

Phonon-phonon anharmonic effects have a strong influence on the phonon spectrum; most prominent manifestation of these effects are the softening (shift in frequency) and broadening (change in FWHM) of the phonon modes at finite temperature. Using Ram

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::372987f8c8f38050c3bea7676a1927f7
https://hal.archives-ouvertes.fr/hal-02925911

Zobrazit plný text záznamu

Weakly Trapped, Charged, and Free Excitons in Single-Layer MoS2 in the Presence of Defects, Strain, and Charged Impurities

Publikováno v: ACS Nano
ACS Nano, 2017, 11 (11), pp.11206. ⟨10.1021/acsnano.7b05520⟩
ACS Nano, American Chemical Society, 2017, 11 (11), pp.11206. ⟨10.1021/acsnano.7b05520⟩
Zaguán. Repositorio Digital de la Universidad de Zaragoza
instname

International audience; Few- and single-layer MoS2 host substantial densities of defects. They are thought to influence the doping level, the crystal structure, and the binding of electron-hole pairs. We disentangle the concomitant spectroscopic expr

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::233141c96971d50b0475af498a34e811
https://doi.org/10.1021/acsnano.7b05520

Zobrazit plný text záznamu

Evolution of inter-layer coupling in artificially stacked bilayer MoS

Autor: Suman, Sarkar, H L, Pradeepa, Goutham, Nayak, Laetitia, Marty, Julien, Renard, Johann, Coraux, Nedjma, Bendiab, Vincent, Bouchiat, Jaydeep K, Basu, Aveek, Bid

Publikováno v: Nanoscale advances. 1(11)

In this paper, we show experimentally that for van der Waals heterostructures (vdWh) of atomically-thin materials, the hybridization of bands of adjacent layers is possible only for ultra-clean interfaces. This we achieve through a detailed experimen

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=pmid________::a346641fd1d77cb77a698de2cfb29677
https://pubmed.ncbi.nlm.nih.gov/36134393

Zobrazit plný text záznamu

Coherence and Density Dynamics of Excitons in a Single-Layer MoS

Autor: Tomasz, Jakubczyk, Goutham, Nayak, Lorenzo, Scarpelli, Wei-Lai, Liu, Sudipta, Dubey, Nedjma, Bendiab, Laëtitia, Marty, Takashi, Taniguchi, Kenji, Watanabe, Francesco, Masia, Gilles, Nogues, Johann, Coraux, Wolfgang, Langbein, Julien, Renard, Vincent, Bouchiat, Jacek, Kasprzak

Publikováno v: ACS nano. 13(3)

[Image: see text] We measure the coherent nonlinear response of excitons in a single layer of molybdenum disulfide embedded in hexagonal boron nitride, forming a h-BN/MoS(2)/h-BN heterostructure. Using four-wave mixing microscopy and imaging, we corr

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=pmid________::b9e9727dd99d15bde379a0e02cefff13
https://pubmed.ncbi.nlm.nih.gov/30735350

Zobrazit plný text záznamu

Cathodoluminescence enhancement and quenching in type-I van der Waals heterostructures: Cleanliness of the interfaces and defect creation

Autor: Tomasz Jakubczyk, T. Taniguchi, Jacek Kasprzak, Maxime Richard, Goutham Nayak, Simone Lisi, Fabrice Donatini, Vincent Bouchiat, Nedjma Bendiab, Laëtitia Marty, Julien Renard, Johann Coraux, Wei-Lai Liu, Aveek Bid, Kenji Watanabe, Petr Stepanov

Publikováno v: Physical Review Materials
Physical Review Materials, American Physical Society, 2019, 3 (11), pp.114001. ⟨10.1103/PhysRevMaterials.3.114001⟩

Layered materials, such as transition metal dichalcogenides, can be combined at will in van der Waals heterostructures and lead to a variety of new phenomena. To better understand the coupling between layers and the variation of electronic and optica

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::5e17e40570a19f1977e4a8b31cca70f3
https://hal.archives-ouvertes.fr/hal-02360330

Zobrazit plný text záznamu

Large scale graphene/h-BN heterostructures obtained by direct CVD growth of graphene using high-yield proximity-catalytic process

Autor: Goutham Nayak, Nedjma Bendiab, John Landers, Vincent Bouchiat, Dipankar Kalita, Takashi Taniguchi, C. Berne, Laëtitia Marty, Kenji Watanabe, Zheng Han, Johann Coraux, Hadi Arjmandi-Tash, Riadh Othmen

Publikováno v: Journal of Physics: Materials
Journal of Physics: Materials, IOP Science, 2018, 1 (1), pp.015003. ⟨10.1088/2515-7639/aac66e⟩

We present a transfer-free process for the rapid growth of graphene on hexagonal boron nitride (h-BN) flakes via chemical vapor deposition. The growth of graphene on top of h-BN flakes is promoted by the adjacent copper catalyst. Full coverage of hal

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::516f2b31d6e9c9bd106b8efa54708022
https://hal.archives-ouvertes.fr/hal-01906099

Zobrazit plný text záznamu

Vyhledávací nástroje:

Upřesnit hledání