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A design of an attenuator for IR laser radiation and the method for its manufacturing are described. The device is based on the electric-field-induced shift of the optical absorption edge of indium selenide crystals. It is shown that InSe with a resi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=r39c86a4b39b::a60dacd78a1b8865f55a14ba58738672
https://aperta.ulakbim.gov.tr/record/104063
https://aperta.ulakbim.gov.tr/record/104063
Autor:
Gousseynov, E. K., Gasiyev, F. N.
Publikováno v:
Proceedings of SPIE; Nov1999, Issue 1, p49-54, 6p
Publikováno v:
International Journal of Infrared & Millimeter Waves; Jan1999, Vol. 20 Issue 1, p71-76, 6p