Zobrazeno 1 - 10
of 83
pro vyhledávání: '"Gourab Dutta"'
Publikováno v:
IEEE Transactions on Electron Devices. 70:454-460
Publikováno v:
IEEE Transactions on Electron Devices. 67:3536-3540
An accurate physics-based analytical model for the gate capacitance of p-GaN gate AlGaN/GaN high electron mobility transistor (HEMT) is presented. The Poisson’s equation is formulated considering the incomplete ionization of acceptors in the p-GaN
Publikováno v:
IEEE Transactions on Device and Materials Reliability. 20:613-621
Low temperature (LT) and high pressure oxidized (HPO) Al2O3 is investigated as a gate dielectric for AlInN/GaN MIS-HEMTs. The time and temperature of the oxidation process was optimized for best performance. X-ray photoelectron spectroscopic (XPS) st
Publikováno v:
Asian Journal of Computer Science and Technology. 8:9-12
Cloud computing provides all the basic level of computing facility to complete the daily needs of a general or public community. In this paper, we concerned about the topic of carbon dioxide and carbon monoxide emission from cloud computing and its e
Autor:
Abhijit Maity, Gourab Dutta Banik, Sanchi Maithani, Sayoni Bhattacharya, Mithun Pal, Chiranjit Ghosh, Sujit Chaudhuri, Manik Pradhan
Publikováno v:
Chemical Physics. 520:21-26
The active Ni(II) centre of metalloenzyme urease forms a coordination with substrate urea prior to the hydrolysis of urea. The present study provided the direct experimental evidences of isotope preferential coordination between Ni(II) metal centre o
Publikováno v:
Journal of Physics D: Applied Physics.
Employing Coulomb-coupled systems, we demonstrate a cryogenic non-local refrigeration engine, that circumvents the need for a change in the energy resolved system-to-reservoir coupling, demanded by the recently proposed non-local refrigerators. We de
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c120094c33209ae4d4b47d257036cd1e
Publikováno v:
Journal of Physics D: Applied Physics. 54:405103
Physical operation and performance of a dual gate β-Gallium Oxide nanomembrane field effect transistor (NM-FET) with asymmetric top and back gate oxide thicknesses are investigated for different modes of operation. A physics-based device simulator c
Publikováno v:
IEEE Transactions on Electron Devices. 64:3609-3615
Gate leakage mechanisms in AlInN/GaN and AlGaN/GaN metal insulator semiconductor high-electron-mobility transistors (MIS-HEMTs) with SiNx as gate dielectric have been investigated. It is found that the conduction in the reverse gate bias is due to Po
Autor:
Suman Som, Abhijit Maity, Santanu Mandal, Manik Pradhan, Mithun Pal, Sanchi Maithani, Gourab Dutta Banik
Publikováno v:
Analytical Methods. 9:2315-2320
Nitrous oxide (N2O) is an important anthropogenic greenhouse gas emitted into the atmosphere that can contribute to ozone destruction. Considering its environmental importance, the real-time monitoring and molecule-specific detection of atmospheric N