Zobrazeno 1 - 6
of 6
pro vyhledávání: '"Gou Andou"'
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. :933-937
The production process of secondary electrons at a LiF(0 0 1) surface is investigated utilizing specular reflection of 0.5 MeV protons. From the observed secondary-electron yield, the position-dependent secondary-electron production rate is derived.
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 160:16-20
Secondary electron yield induced by 0.5 MeV protons reflected from a KCl(0 0 1) surface is measured at various incident azimuthal angles around the [1 0 0] direction. The observed secondary electron yield shows enhancement under surface channeling co
Publikováno v:
Physical Review Letters. 81:5438-5441
Publikováno v:
Physical Review A. 58:1282-1286
Secondary-electron yield induced by MeV protons specularly reflected from a SnTe(001) surface is measured. From the observed secondary-electron yield, the position-dependent secondary-electron production rate $P(x)$ is derived as a function of distan
Publikováno v:
PHYSICAL REVIEW A. 61
We have measured the secondary-electron (SE) yield in coincidence with 1\char21{}2-MeV ${\mathrm{He}}^{+,2+}$ ions reflected from a SnTe(001) at grazing incidence. Specific ion trajectories, i.e., true specular reflection and subsurface channeling, c
Publikováno v:
AIP Conference Proceedings.
The production process of secondary electrons at surface is investigated utilizing specular reflection of MeV protons at SnTe(001) and KCl(001) surfaces. The secondary-electron yield induced by 0.5-MeV protons specularly reflected from SnTe(001) is a