Zobrazeno 1 - 10
of 415
pro vyhledávání: '"Gottlieb S. Oehrlein"'
Autor:
Yudong Li, Jingkai Jiang, Michael Hinshelwood, Shiqiang Zhang, Peter J Bruggeman, Gottlieb S Oehrlein
Publikováno v:
Journal of Physics D: Applied Physics. 55:155204
In this work, we investigated atmospheric pressure plasma jet (APPJ)-assisted methane oxidation over a Ni-SiO2/Al2O3 catalyst. We evaluated possible reaction mechanisms by analyzing the correlation of gas phase, surface and plasma-produced species. P
Publikováno v:
Journal of Physics D: Applied Physics. 55:155202
Atmospheric pressure plasma has shown promise in improving thermally activated catalytic reactions through a process termed plasma-catalysis synergy. In this work, we investigated atmospheric pressure plasma jet (APPJ)-assisted CH4 oxidation over a N
Publikováno v:
Journal of Vacuum Science & Technology A. 39:043001
Maintaining uniform sample etching during a plasma process is a critical requirement for applications in large-scale wafer processing. The interface between the plasma and the sample surface is defined by the plasma sheath, which accelerates ions tow
Autor:
Sang-wuk Park, Keizo Kinoshita, Kenji Ishikawa, Silvia Armini, Gottlieb S. Oehrlein, Tatsuru Shirafuji, Keren J. Kanarik, Yasuhiro Morikawa, Richard A. Gottscho, Hisataka Hayashi, Tatsuo Ishijima, Nathan P. Marchack, Gert J. Leusink, Emilie Despiau-Pujo, Takahide Murayama
Publikováno v:
Japanese Journal of Applied Physics
Japanese Journal of Applied Physics, Japan Society of Applied Physics, 2019, 58 (SE), pp.SE0801. ⟨10.7567/1347-4065/ab163e⟩
Japanese Journal of Applied Physics, 2019, 58 (SE), pp.SE0801. ⟨10.7567/1347-4065/ab163e⟩
Japanese Journal of Applied Physics, Japan Society of Applied Physics, 2019, 58 (SE), pp.SE0801. ⟨10.7567/1347-4065/ab163e⟩
Japanese Journal of Applied Physics, 2019, 58 (SE), pp.SE0801. ⟨10.7567/1347-4065/ab163e⟩
International audience
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::bca17bb5242eaeeee079b4e77984bcef
https://hal.univ-grenoble-alpes.fr/hal-02337524
https://hal.univ-grenoble-alpes.fr/hal-02337524
Autor:
John E. Petersen, Nikolaos Liaros, Sandra A. Gutierrez Razo, John T. Fourkas, Gottlieb S. Oehrlein, Adam Pranda
Publikováno v:
Novel Patterning Technologies for Semiconductors, MEMS/NEMS, and MOEMS 2019.
Three-color lithography (3CL) produces features on the scale of tens of nanometers using visible light. In this technique, one beam pre-activates a photoresist, a second beam deactivates it, and a third beam activates the pre-activated regions that h
Autor:
Pingshan Luan, Gottlieb S. Oehrlein
Publikováno v:
Langmuir : the ACS journal of surfaces and colloids. 35(12)
We report on the chemical analysis of ultrathin (10 nm) polymer films using the attenuated total reflectance-Fourier transform infrared (ATR-FTIR) technique based on p-polarized infrared light and two types of enhancing substrates, that is, metallic
Autor:
Shiqiang Zhang, Gottlieb S. Oehrlein
Publikováno v:
Journal of Physics D: Applied Physics. 54:213001
The use of atmospheric pressure plasma to enhance catalytic chemical reactions involves complex surface processes induced by the interactions of plasma-generated fluxes with catalyst surfaces. Industrial implementation of plasma catalysis necessitate
Autor:
Peter Bruggeman, Pingshan Luan, Andrew J. Knoll, Elliot A. J. Bartis, Gottlieb S. Oehrlein, V. S.S.K. Kondeti
Publikováno v:
Plasma Processes and Polymers. 13:1069-1079
This study uses photoresist materials in combination with several optical filters as a diagnostic to examine the relative importance of VUV-induced surface modifications for different cold atmospheric pressure plasma (CAPP) sources. The argon fed kHz
Autor:
Gottlieb S. Oehrlein, Robert L. Bruce, Eric A. Joseph, Sebastian Engelmann, Adam Pranda, Dominik Metzler, Kang-Yi Lin
Publikováno v:
Journal of Vacuum Science & Technology A. 38:052601
Extreme ultraviolet (EUV) lithography has emerged as the next generational step in advancing the manufacturing of increasingly complex semiconductor devices. The commercial viability of this new lithographic technique requires compatible photoresist
Publikováno v:
Journal of Vacuum Science & Technology A. 38:033001
A material etching system was developed by combining beam electron injection from a direct current hollow cathode (HC) electron source with the downstream reactive environment of a remote CF4/O2 low temperature plasma. The energy of the injected beam