Zobrazeno 1 - 10
of 40
pro vyhledávání: '"Goswami, Aranya"'
Autor:
McFadden, Anthony, Goswami, Aranya, Zhao, Tongyu, van Schijndel, Teun, Larson, Trevyn F. Q., Sahu, Sudhir, Gill, Stephen, Lecocq, Florent, Simmonds, Raymond, Palmstrøm, Chris
Increasing the density of superconducting circuits requires compact components, however, superconductor-based capacitors typically perform worse as dimensions are reduced due to loss at surfaces and interfaces. Here, parallel plate capacitors compose
Externí odkaz:
http://arxiv.org/abs/2408.01369
Autor:
Goswami, Aranya, Mudi, Sanchayeta R., Dempsey, Connor, Zhang, Po, Wu, Hao, Mitchell, William J., Frolov, Sergey M., Palmstrøm, Christopher J.
Superconductor-semiconductor nanowire hybrid structures are useful in fabricating devices for quantum information processing. While selective area growth (SAG) offers the flexibility to grow semiconductor nanowires in arbitrary geometries, in-situ ev
Externí odkaz:
http://arxiv.org/abs/2303.04297
Autor:
Goswami, Aranya, McFadden, Anthony P., Zhao, Tongyu, Inbar, Hadass S., Dong, Jason T., Zhao, Ruichen, McRae, Corey Rae, Simmonds, Raymond W., Palmstrøm, Christopher J., Pappas, David P.
A merged-element transmon (MET) device, based on silicon (Si) fins, is proposed and the first steps to form such a "FinMET" are demonstrated. This new application of fin technology capitalizes on the anisotropic etch of Si(111) relative to Si(110) to
Externí odkaz:
http://arxiv.org/abs/2108.11519
Autor:
Chatterjee, Shouvik, de Lima, Felipe Crasto, Logan, John A., Fang, Yuan, Inbar, Hadass, Goswami, Aranya, Dempsey, Connor, Khalid, Shoaib, Brown-Heft, Tobias, Chang, Yu-Hao, Guo, Taozhi, Pennacchio, Daniel, Wilson, Nathaniel, Dong, Jason, Chikara, Shalinee, Suslov, Alexey, Fedorov, Alexei V., Read, Dan, Cano, Jennifer, Janotti, Anderson, Palmstrom, Christopher J.
Publikováno v:
Physical Review Materials, 5, 124207 (2021)
Topological materials often exhibit remarkably linear, non-saturating magnetoresistance (LMR), which is both of scientific and technological importance. However, the role of topologically non-trivial states in the emergence of such a behaviour has el
Externí odkaz:
http://arxiv.org/abs/2012.12633
Autor:
McFadden, Anthony, Goswami, Aranya, Seas, Michael, McRae, Corey Rae H., Zhao, Ruichen, Pappas, David P., Palmstrøm, Christopher J.
Epitaxial Al/GaAs/Al structures having controlled thickness of high-quality GaAs and pristine interfaces have been fabricated using a wafer-bonding technique. III-V semiconductor/Al structures are grown by molecular beam epitaxy on III-V semiconducto
Externí odkaz:
http://arxiv.org/abs/2007.10484
Autor:
Chatterjee, Shouvik, Khalid, Shoaib, Inbar, Hadass S., Goswami, Aranya, de Lima, Felipe Crasto, Sharan, Abhishek, Sabino, Fernando P., Brown-Heft, Tobias L., Chang, Yu-Hao, Fedorov, Alexei V., Read, Dan, Janotti, Anderson, Palmstrøm, Christopher J.
Publikováno v:
Phys. Rev. B 99, 125134 (2019)
Observation of large non-saturating magnetoresistance in rare-earth monopnictides has raised enormous interest in understanding the role of its electronic structure. Here, by a combination of molecular-beam epitaxy, low-temperature transport, angle-r
Externí odkaz:
http://arxiv.org/abs/1902.00048
Autor:
Goswami, Aranya, Markman, Brian, Brunelli, Simone T. Šuran, Chatterjee, Shouvik, Klamkin, Jonathan, Rodwell, Mark, Palmstrøm, Chris J.
Publikováno v:
Journal of Applied Physics; 8/28/2021, Vol. 130 Issue 8, p1-9, 9p
Autor:
McFadden, Anthony P., Goswami, Aranya, Seas, Michael, McRae, Corey Rae H., Zhao, Ruichen, Pappas, David P., Palmstrøm, Christopher J.
Publikováno v:
Journal of Applied Physics; 9/21/2020, Vol. 128 Issue 11, p1-8, 8p
Autor:
Chatterjee, Shouvik, de Lima, Felipe Crasto, Logan, John A., Fang, Yuan, Inbar, Hadass, Goswami, Aranya, Dempsey, Connor, Dong, Jason, Khalid, Shoaib, Brown-Heft, Tobias, Chang, Yu-Hao, Guo, Taozhi, Pennachio, Daniel J., Wilson, Nathaniel, Chikara, Shalinee, Suslov, Alexey, Fedorov, Alexei V., Read, Dan, Cano, Jennifer, Janotti, Anderson, Palmstrøm, Christopher J.
Topological materials often exhibit remarkably linear nonsaturating magnetoresistance (LMR), which is both of scientific and technological importance. However, the role of topologically nontrivial states in the emergence of such a behavior has eluded
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=core_ac_uk__::be9226d7e0e2984738e4e212d0bf6c27
https://orca.cardiff.ac.uk/id/eprint/148306/1/Post-print.pdf
https://orca.cardiff.ac.uk/id/eprint/148306/1/Post-print.pdf
Autor:
Šuran Brunelli, Simone Tommaso, Markman, Brian, Goswami, Aranya, Tseng, Hsin-Ying, Choi, Sukgeun, Palmstrøm, Chris, Rodwell, Mark, Klamkin, Jonathan
Publikováno v:
Journal of Applied Physics; 7/7/2019, Vol. 126 Issue 1, pN.PAG-N.PAG, 8p, 3 Color Photographs, 2 Black and White Photographs, 1 Chart, 2 Graphs