Zobrazeno 1 - 2
of 2
pro vyhledávání: '"Gorge Cai"'
Autor:
Jie Zhao, Kurban Awut, Woei Ji Song, Yi Zhi Zeng, Bin Zhang, Shao Feng Yu, Han Jie Gao, Gorge Cai
Publikováno v:
ECS Transactions. 60:721-725
High-k last and metal gate last process becomes the main stream in 20nm and beyond technology. In high-k last process, the thermal dummy gate oxide (DGO) must be removed before the growth of interfacial layer (IL). In conventional process, to avoid t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::adf4241c41388463f77eb1305fa7b4e1
https://doi.org/10.1149/06001.0721ecst
https://doi.org/10.1149/06001.0721ecst
Arsenic Dimer (As2 +) Lightly Doped Drain (LDD) Implantation Study for 20nm Logic Device Development
Autor:
Xinyun Xie, Weimin Shi, Yu Shaofeng, Hao Sun, Zhang Shuai, Gorge Cai, Yong Li, Xuejie Shi, Jianhua Ju, Larry Chen, Yonggen He, Zuyuan Zhou
Publikováno v:
ECS Transactions. 60:51-55
Process variation presents a significant challenge to future scaling of VLSI technology. Junction depth scaling with small Vth variation is required for the 45 nm technology node and beyond. Variations in MOSFET characteristics due to random dopant f
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5e5771cb3d98b1b4c4a2962b42f69b2c
https://doi.org/10.1149/06001.0051ecst
https://doi.org/10.1149/06001.0051ecst