Zobrazeno 1 - 6
of 6
pro vyhledávání: '"Gordon Tsen"'
Publikováno v:
Journal of Electronic Materials. 39:1019-1022
In order to evaluate the effectiveness of CdTe surface passivating layers, HgCdTe photoconductors with and without CdTe sidewall passivation were fabricated. As expected, photoconductors with CdTe sidewall passivation demonstrated significantly highe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cd35aa092cfc7e4d6f84e1e45041279f
https://doi.org/10.1007/s11664-010-1083-x
https://doi.org/10.1007/s11664-010-1083-x
Publikováno v:
Journal of Electronic Materials. 36:826-831
The electrical properties of semiconductor materials have conventionally been extracted via Hall measurements performed at a single magnetic field. When applied to a semiconductor such as HgCdTe with mixed conduction characteristics, the values obtai
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a1c94d1917709b0c0aae36e3322d9444
https://doi.org/10.1007/s11664-007-0103-y
https://doi.org/10.1007/s11664-007-0103-y
Publikováno v:
Applied Physics Letters. 92:082107
Arsenic incorporation in HgTe∕Hg0.05Cd0.95Te superlattices grown by molecular beam epitaxy (MBE) is reported. The incorporation was carried out by a δ-doping approach where arsenic was incorporated during MBE growth as acceptors. The superlattices
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1a8fdb11a2ccd4be4aaaa06cef5adb20
https://doi.org/10.1063/1.2888967
https://doi.org/10.1063/1.2888967
Autor:
Richard Sewell, K.E. Prince, John Dell, A.J. Atanacio, Lorenzo Faraone, Gordon Tsen, Charles Musca
Publikováno v:
Semiconductor Science and Technology. 23:015014
Research into p-type doping of HgCdTe with arsenic has concentrated on the use of a conventional effusion cell and optimization of growth conditions to achieve an increase in incorporation efficiency. This study investigates the use of a cracker cell
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::505927df1d88790357f001a54d0200ba
https://doi.org/10.1088/0268-1242/23/1/015014
https://doi.org/10.1088/0268-1242/23/1/015014
Publikováno v:
University of Western Australia
HgCdTe is the preferred semiconductor for fabrication of high-performance infrared (IR) detectors. This material also typically contains multiple carrier species for charge transport, which makes characterisation of the mobility and concentration of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d2431dd53d14e34c71468dee3e7f9474
https://research-repository.uwa.edu.au/en/publications/9b7113f2-4da0-43e9-8859-b76f80b2b554
https://research-repository.uwa.edu.au/en/publications/9b7113f2-4da0-43e9-8859-b76f80b2b554
Publikováno v:
University of Western Australia
The semiconductor-passivating layer interfaces, as well as their dielectric properties, play important and very often dominant roles in determining HgCdTe device performance. In this work, photoconductors were fabricated on p-type mid-wave infrared H
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d015fa440be441795169f447665c22fd
https://research-repository.uwa.edu.au/en/publications/f67269c7-5e6e-4277-b4e5-160e9be9532e
https://research-repository.uwa.edu.au/en/publications/f67269c7-5e6e-4277-b4e5-160e9be9532e