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pro vyhledávání: '"Gordon Hsieh"'
Autor:
Gerben Doornbos, Martin Holland, Georgios Vellianitis, Mark J. H. Van Dal, Blandine Duriez, Richard Oxland, Aryan Afzalian, Ta-Kun Chen, Gordon Hsieh, Matthias Passlack, Yee-Chia Yeo
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 4, Iss 5, Pp 253-259 (2016)
We report on the first realization of InAs n-channel gate-all-around nanowire MOSFETs on 300 mm Si substrates using a fully very large-scale integration (VLSI)-compatible flow. Scaling of the equivalent oxide thickness EOT in conjunction with high-κ
Externí odkaz:
https://doaj.org/article/3f9a947ff28244ed8ba1c54803efcb7e
