Zobrazeno 1 - 8
of 8
pro vyhledávání: '"Gordon Gainer"'
Autor:
Gordon Gainer, Jin-Joo Song, Tong Ni, Xiaorong Liang, Nicholas A. Kotov, Dattatri K. Nagesha, Arif A. Mamedov, Michael Giersig, Margaret A. Eastman
Publikováno v:
The Journal of Physical Chemistry B. 105:7490-7498
Stable aqueous colloids of 2−3 nm In2S3 nanocrystals have been prepared by using the classical method of nanoparticle stabilization by low molecular weight thiols. TEM crystal lattice spacing, X-ray diffraction, EDAX data, and electron diffraction
Autor:
J. B. Lam, Jerzy S. Krasinski, T. Sugahara, S. K. Shee, J. J. Song, B. D. Little, Hua-Shuang Kong, Y. H. Kwon, G. E. Bulman, Gordon Gainer, Gil Han Park, S. Bidnyk, S.J. Hwang
Publikováno v:
physica status solidi (a). 183:105-109
We achieved low-threshold ultra-violet lasing in optically pumped GaN/AlGaN separate confinement heterostructures over a wide temperature range. Lasing modes of a single microcavity were examined from 20 to 300 K and gain mechanisms were compared to
Autor:
Margaret A. Eastman, Michael Giersig, Dattatri K. Nagesha, Jin-Joo Song, Gordon Gainer, Tong Ni, Xiaorong Liang, Arif A. Mamedov, Nicholas A. Kotov
Publikováno v:
ChemInform. 32
Stable aqueous colloids of 2−3 nm In2S3 nanocrystals have been prepared by using the classical method of nanoparticle stabilization by low molecular weight thiols. TEM crystal lattice spacing, X-ray diffraction, EDAX data, and electron diffraction
Publikováno v:
SPIE Proceedings.
We have modified the anomalous peak energy of the temperature dependent photoluminescence (PL) of Al x Ga 1-x N/GaN nanoheterostructures (0
Autor:
B. D. Little, G. E. Bulman, Jin-Joo Song, S. Bidnyk, Hua-Shuang Kong, Yong-Hwan Kwon, J. B. Lam, Gordon Gainer
Publikováno v:
MRS Proceedings. 622
We report a comprehensive study on the optical properties of GaN- and AlGaN-based lasing structures at high-levels of optical excitation (carrier densities of 1017−1020 cm−3) and identify critical issues necessary for the development of near- and
Autor:
G. H. Park, Amal Elgawadi, Jin-Joo Song, Jerzy S. Krasinski, J. B. Lam, Vladimir Dmitriev, D. Tsvetkov, Gordon Gainer, S. Bidnyk
Publikováno v:
MRS Proceedings. 639
We studied and compared the emission properties of optically excited (Al)GaN structures grown by two different techniques: hydride vapor phase epitaxy (HVPE) and metalorganic chemical vapor deposition (MOCVD). We successfully achieved stimulated emis
Publikováno v:
Journal of Physics: Condensed Matter. 25:335803
The crystal orientation dependence of GaN excitons was investigated via the photoluminescence (PL) technique. The PL emissions at a temperature of 10 K were obtained from two experimental configurations where the emission K vector (the propagation ve
Publikováno v:
Journal of Applied Physics. 103:123512
We present a study of the effect of the strain on the anomalous temperature dependence of the photoluminescence (PL) transition energy of three-nanolayer AlxGa1−xN nanoheterostructur∕GaN (0