Zobrazeno 1 - 3
of 3
pro vyhledávání: '"Gordon C. Osborne"'
Autor:
Mark C. H. Lamorey, Timothy H. Daubenspeck, R. Bisson, Thomas A. Wassick, K. Smith, Hosadurga Shobha, Dimitri R. Kioussis, Griselda Bonilla, J. Wright, S. Tetreault, David B. Stone, I. Paquin, Timothy M. Shaw, E. Misra, Gordon C. Osborne, Brian R. Sundlof, X.-H. Liu, Christopher D. Muzzy, S. S. Bouchard, David L. Questad
Publikováno v:
2016 IEEE International Reliability Physics Symposium (IRPS).
This study examines different approaches to determining the chip failure rate that occurs due to dielectric cracking under C4 sites during chip joining. We show that testing of the strength of individual C4s by a single bump shear technique gives a s
Autor:
Timothy H. Daubenspeck, Timothy M. Shaw, X.-H. Liu, Christopher D. Muzzy, Griselda Bonilla, S. S. Bouchard, Thomas A. Wassick, David B. Stone, David L. Questad, Brian R. Sundlof, Hosadurga Shobha, Dimitri R. Kioussis, I. Paquin, E. Misra, Gordon C. Osborne, J. Wright, S. Tetreault, R. Bisson, Mark C. H. Lamorey
Publikováno v:
2015 IEEE International Integrated Reliability Workshop (IIRW).
The paper examines the factors that affect the formation of delaminations under C4 joints during chip joining. Through multiscale finite element modeling and chip joining experiments we find that two important parameters determining the susceptibilit
Autor:
Kumar Virwani, B. Sundlof, T. Lee, Griselda Bonilla, S. Liang, Anita Madan, Darryl D. Restaino, C. Child, Steven E. Molis, Errol Todd Ryan, Timothy M. Shaw, Timothy H. Daubenspeck, Gordon C. Osborne, N. Klymko, Z. Sun, Hosadurga Shobha, Dimitri R. Kioussis, Clevenger Leigh Anne H, Alfred Grill, H. Masuda, Augur Roderick A, Roger A. Quon, Stephan A. Cohen, Stephen M. Gates
Publikováno v:
2011 IEEE International Interconnect Technology Conference.
There is an ongoing need in the microelectronics industry to increase circuit density in multilevel back-end-of line (BEOL) interconnects to improve the operating speed and reduce power consumption. One way to maintain capacitance-resistance (RC) per