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pro vyhledávání: '"Gordienk, S.O."'
Autor:
Tiagulskyi, S.I., Nazarov, A.N., Gordienk, S.O., Vasin, A.V., Rusavsky, A.V., Nazarova, T.M., Gomeniuk, Yu.V., Rudko, G.V., Lysenko, V.S., Rebohle, L., Voelskow, M., Skorupa, W., Koshka, Y.
An electroluminescent device utilizing a heterostructure of amorphous terbium doped carbon-rich SiOx (a - SiOx : C : Tb) on silicon has been developed. The a - SiOx : C : Tb active layer was formed by RF magnetron sputtering of a - SiO₁₋x : Cx :
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od______1456::2f5d67c9e0d7a177a6771b1dc5bdbc3c
http://dspace.nbuv.gov.ua/handle/123456789/118346
http://dspace.nbuv.gov.ua/handle/123456789/118346
