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pro vyhledávání: '"Gopi Raja Uppu"'
Publikováno v:
Bulletin of Materials Science. 39:1441-1451
In this article a double-barrier resonant tunnelling diode (DBRTD) has been modelled by taking advantage of single-layer hexagonal lattice of graphene and hexagonal boron nitride (h-BN). The DBRTD performance and operation are explored by means of a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::adb1e10657cd15e4315c4e952db3c9fe
https://doi.org/10.1007/s12034-016-1285-9
https://doi.org/10.1007/s12034-016-1285-9
