Zobrazeno 1 - 10
of 28
pro vyhledávání: '"Gopa Sen"'
Publikováno v:
Journal of Computational Electronics. 20:274-279
The amount of doping to make a semiconductor extrinsic depends on the intrinsic carrier density at a particular temperature. The impurity scattering in the presence of doping determines the maximum mobility exhibited by the semiconductor. In the pres
Publikováno v:
Journal of Computational Electronics. 19:1433-1443
A strained Ge1−x−ySixSny/Ge1−a−bSiaSnb direct type II staggered heterojunction n-channel tunneling field-effect transistor (FET) with a dual-material double gate is proposed herein. A high-K gate dielectric is used to improve the overall devi
Publikováno v:
Semiconductors. 54:77-84
The performance of a Multiple Quantum Well (MQW) Heterojunction Bipolar Transistor Laser (HBTL) has been studied using GeSn alloy. Both symmetric and asymmetric quantum wells have been considered. Main analysis is focused on finding the minority carr
Publikováno v:
Physica E: Low-dimensional Systems and Nanostructures. 106:62-67
We have studied the performance of a Quantum Confined Stark Effect (QCSE) dominated resonant cavity enhanced (RCE) Heterobipolar Phototransistor (HPT) using an absorption layer of Ge 0.992Sn0.008 QW with Si0.3Ge0.61Sn0.09 barrier between base and col
Publikováno v:
Computers and Devices for Communication ISBN: 9789811583650
Values of intrinsic carrier density ni in Ge1−xSnx alloy (0 ≤ x ≤ 0.2) are calculated by including composition dependent effective masses in Γ and L valleys in the conduction band, in light hole (LH) and heavy hole (HH) valence bands, and comp
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ffb835475217c6f846b6ff1a5db432cd
https://doi.org/10.1007/978-981-15-8366-7_81
https://doi.org/10.1007/978-981-15-8366-7_81
Publikováno v:
Computers and Devices for Communication ISBN: 9789811583650
QWIP using group IV elements are of great research attention for its potential application in optical communication and in optical interconnects. The high-frequency performance of GeSn–SiGeSn QWIP has been studied considering the intersubband trans
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ccd24a09c52d52a10ddc91586d89f5e9
https://doi.org/10.1007/978-981-15-8366-7_66
https://doi.org/10.1007/978-981-15-8366-7_66
Publikováno v:
2020 URSI Regional Conference on Radio Science ( URSI-RCRS).
The performance of a resonant cavity enhanced Heterobipolar Phototransistor with Ge 0.992 Sn 0.008 /Si 0.3 Ge 0.61 Sn 0.09 Quantum Well under Quantum Confined Stark Effect has been presented here. Further the Quantum Wells are replaced by GeSn bulk a
Autor:
Anh Cuong Tran, Gopa Sen, Quang H. Nguyen, Ramasamy Muthuraman, Binh P. Nguyen, Laxman Singh, Matthew Chin Heng Chua
Publikováno v:
ICMLSC
Diabetic Retinopathy (DR) is an eye disease associated with chronic diabetes. DR is the leading cause of blindness among working aged adults around the world and estimated it may affect more than 93 million people. Progression to vision impairment ca
Publikováno v:
Solid State Communications. 270:155-159
We have examined type II band alignment in Ge1-x-ySixSny/Ge1-α-βSiαSβ heterojunctions grown on virtual substrates in Si platform. It is found that, for different values of x, y, α and β, direct band gap type II band line up can be achieved for
Autor:
Pier Lim, Trang T. T. Do, Matthew Chin Heng Chua, Binh P. Nguyen, Hung N. Pham, Gopa Sen, Teresa Siew Loon Cheng, Kelvin Yi Jie Chan, Quang H. Nguyen, Andy Y. K. Han
Publikováno v:
2019 International Conference on System Science and Engineering (ICSSE).
Previous studies have used data related to either voice or spiral drawing to detect Parkinson disease (PD). However, different people experience different symptoms and different levels of severity of PD. This paper proposes a multimodal approach comb