Výsledky vyhledávání - "Goovaerts, E."

Report

On the origin of the Raman scattering in heavily boron-doped diamond

Autor: Vlasov, I. I., Ekimov, E. A., Basov, A. A., Goovaerts, E., Zoteev, A. V.

Isotopic substitution of boron and carbon is applied for the identification of the vibrational modes of heavily boron-doped diamond synthesized by high-pressure high-temperature technique. None of the bands in the Raman spectra are shifting upon ^{10

Externí odkaz: http://arxiv.org/abs/0801.1611

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Highly efficient room temperature spin injection in a metal-insulator-semiconductor light emitting diode

Autor: Van Dorpe, P., Motsnyi, V. F., Nijboer, M., Goovaerts, E., Safarov, V. I., Das, J., Van Roy, W., Borghs, G., De Boeck, J.

Publikováno v: Jpn. J. Appl. Phys. Vol.42 No.5B pp.L502 - L504 (2003)

We demonstrate highly efficient spin injection at low and room temperature in an AlGaAs/GaAs semiconductor heterostructure from a CoFe/AlOx tunnel spin injector. We use a double-step oxide deposition for the fabrication of a pinhole-free AlOx tunnel

Externí odkaz: http://arxiv.org/abs/cond-mat/0208325

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Electrical Spin Injection in a Ferromagnetic / Tunnel Barrier/ Semiconductor Heterostructure

Autor: Motsnyi, V. F., Safarov, V. I., De Boeck, J., Das, J., Van Roy, W., Goovaerts, E., Borghs, G.

Publikováno v: APL 81, 265 (2002)

We demonstrate experimentally the electrical ballistic electron spin injection from a ferromagnetic metal / tunnel barrier contact into a semiconductor III-V heterostructure. We introduce the Oblique Hanle Effect technique for reliable optical measur

Externí odkaz: http://arxiv.org/abs/cond-mat/0110240

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