Zobrazeno 1 - 10
of 519
pro vyhledávání: '"Goodnick P"'
Autor:
Diggs, Andrew, Zhao, Zitong, Vatan, Reza, Unruh, Davis, Manzoor, Salman, Bertoni, Mariana, Goodnick, Stephen, Zimanyi, Gergely
Among silicon-based solar cells, heterojunction cells hold the world efficiency record. However, their market acceptance is hindered by an initial 0.5\% per year degradation of their open circuit voltage which doubles the overall cell degradation rat
Externí odkaz:
http://arxiv.org/abs/2309.02573
Autor:
Ghosh, Subhajit, Mudiyanselage, Dinusha Herath, Rumyantsev, Sergey, Zhao, Yuji, Fu, Houqiang, Goodnick, Stephen, Nemanich, Robert, Balandin, Alexander A.
We report on the low-frequency electronic noise in (Al$_x$Ga$_{1-x}$)$_2$O$_3$ Schottky barrier diodes. The noise spectral density reveals 1/f dependence, characteristic of the flicker noise, with superimposed Lorentzian bulges at the intermediate cu
Externí odkaz:
http://arxiv.org/abs/2304.04744
Autor:
Zou, Yongjie, Esmaielpour, Hamidreza, Suchet, Daniel, Guillemoles, Jean-François, Goodnick, Stephen M.
Under continuous-wave laser excitation in an InGaAs multi-quantum-well (MQW) structure, the carrier temperature extracted from photoluminescence rises faster for 405 nm excitation compared with 980 nm excitation, as the injected carrier density incre
Externí odkaz:
http://arxiv.org/abs/2303.03537
Autor:
Honsberg, Christiana, Bowden, Stuart G., Sellers, Ian R., King, Richard R., Goodnick, Stephen M.
Climate changes and its many associated impacts are one of the most critical global challenges. Photovoltaics has been instrumental in mitigation of CO$_2$ through the generation of electricity. However, the goal of limiting global warming to 1.5 $^\
Externí odkaz:
http://arxiv.org/abs/2202.06745
Autor:
Ghosh, Subhajit, Surdi, Harshad, Kargar, Fariborz, Koeck, Franz A., Rumyantsev, Sergey, Goodnick, Stephen, Nemanich, Robert, Balandin, Alexander A.
Publikováno v:
Appl. Phys. Lett., 120, 062103 (2022)
We report results of an investigation of low-frequency excess noise in high-current diamond diodes. It was found that the electronic excess noise of the diamond diodes is dominated by generation - recombination noise, which reveals itself either as L
Externí odkaz:
http://arxiv.org/abs/2112.14695
Autor:
Unruh, Davis, Meidanshahi, Reza Vatan, Goodnick, Stephen M., Csányi, Gábor, Zimányi, Gergely T.
Hydrogenation of amorphous silicon (a-Si:H) is critical for reducing defect densities, passivating mid-gap states and surfaces, and improving photoconductivity in silicon-based electro-optical devices. Modelling the atomic scale structure of this mat
Externí odkaz:
http://arxiv.org/abs/2106.02946
Several amorphous silicon structures were generated using a classical molecular dynamics (MD) protocol of melting and quenching with different quenching rates. An analysis of the calculated electronic properties of these structures revealed that the
Externí odkaz:
http://arxiv.org/abs/2012.11992
Autor:
Unruh, Davis, Meidanshahi, Reza Vatan, Hansen, Chase, Manzoor, Salman, Goodnick, Stephen M., Bertoni, Mariana I., Zimanyi, Gergely T.
Heterojunction Si solar cells exhibit notable performance degradation. We developed the SolDeg platform to model this degradation as electronic defects getting generated by thermal activation across energy barriers over time. First, molecular dynamic
Externí odkaz:
http://arxiv.org/abs/2012.01703
In this paper, we explore the effect of H and its bonding configurations on the defect state density and orbital localization of hydrogenated amorphous Si (a-Si:H)/crystalline Si (c-Si) heterostructures using density functional theory (DFT) studies o
Externí odkaz:
http://arxiv.org/abs/2011.14158
Autor:
Zou, Yongjie, Goodnick, Stephen M.
Publikováno v:
J. Appl. Phys. 127, 075703 (2020)
Dilute-N GaPAsN alloys have great potential for optoelectronics lattice-matched to Si. However, there is a lack of systematic calculation of the optical response of these alloys. The present paper uses the sp^3d^5s^*s_N tight-binding model to calcula
Externí odkaz:
http://arxiv.org/abs/2003.01143