Zobrazeno 1 - 10
of 341
pro vyhledávání: '"Goodnick, Stephen M."'
Autor:
Zou, Yongjie, Esmaielpour, Hamidreza, Suchet, Daniel, Guillemoles, Jean-François, Goodnick, Stephen M.
Under continuous-wave laser excitation in an InGaAs multi-quantum-well (MQW) structure, the carrier temperature extracted from photoluminescence rises faster for 405 nm excitation compared with 980 nm excitation, as the injected carrier density incre
Externí odkaz:
http://arxiv.org/abs/2303.03537
Autor:
Honsberg, Christiana, Bowden, Stuart G., Sellers, Ian R., King, Richard R., Goodnick, Stephen M.
Climate changes and its many associated impacts are one of the most critical global challenges. Photovoltaics has been instrumental in mitigation of CO$_2$ through the generation of electricity. However, the goal of limiting global warming to 1.5 $^\
Externí odkaz:
http://arxiv.org/abs/2202.06745
Autor:
Unruh, Davis, Meidanshahi, Reza Vatan, Goodnick, Stephen M., Csányi, Gábor, Zimányi, Gergely T.
Hydrogenation of amorphous silicon (a-Si:H) is critical for reducing defect densities, passivating mid-gap states and surfaces, and improving photoconductivity in silicon-based electro-optical devices. Modelling the atomic scale structure of this mat
Externí odkaz:
http://arxiv.org/abs/2106.02946
Autor:
Unruh, Davis, Meidanshahi, Reza Vatan, Hansen, Chase, Manzoor, Salman, Goodnick, Stephen M., Bertoni, Mariana I., Zimanyi, Gergely T.
Heterojunction Si solar cells exhibit notable performance degradation. We developed the SolDeg platform to model this degradation as electronic defects getting generated by thermal activation across energy barriers over time. First, molecular dynamic
Externí odkaz:
http://arxiv.org/abs/2012.01703
In this paper, we explore the effect of H and its bonding configurations on the defect state density and orbital localization of hydrogenated amorphous Si (a-Si:H)/crystalline Si (c-Si) heterostructures using density functional theory (DFT) studies o
Externí odkaz:
http://arxiv.org/abs/2011.14158
Autor:
Zou, Yongjie, Goodnick, Stephen M.
Publikováno v:
J. Appl. Phys. 127, 075703 (2020)
Dilute-N GaPAsN alloys have great potential for optoelectronics lattice-matched to Si. However, there is a lack of systematic calculation of the optical response of these alloys. The present paper uses the sp^3d^5s^*s_N tight-binding model to calcula
Externí odkaz:
http://arxiv.org/abs/2003.01143
Publikováno v:
Phys. Rev. B 96, 075441 (2017)
We investigate a theoretical model for effective carrier mobility to comprehensively describe the behavior of the perpendicular carrier transport across multiple quantum well (MQW) structures under applied electric field. The analytical expressions o
Externí odkaz:
http://arxiv.org/abs/1706.05608
Akademický článek
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Autor:
Fu, Houqiang, Fu, Kai, Yang, Chen, Liu, Hanxiao, Hatch, Kevin A., Peri, Prudhvi, Herath Mudiyanselage, Dinusha, Li, Bingjun, Kim, Tae-Hyeon, Alugubelli, Shanthan R., Su, Po-Yi, Messina, Daniel C., Deng, Xuguang, Cheng, Chi-Yin, Vatan Meidanshahi, Reza, Huang, Xuanqi, Chen, Hong, Yang, Tsung-Han, Zhou, Jingan, Armstrong, Andrew M., Allerman, Andrew A., Yu, Edward T., Han, Jung, Goodnick, Stephen M., Smith, David J., Nemanich, Robert J., Ponce, Fernando A., Zhao, Yuji
Publikováno v:
In Materials Today October 2021 49:296-323
