Zobrazeno 1 - 10
of 21
pro vyhledávání: '"González Marín, Enrique"'
Autor:
Marian, Damiano, Soriano, David, Cannavó, Emmanuele, González Marín, Enrique, Fiori, Gianluca
The authors gratefully acknowledge Graphene Flagship Core 3 (Contract No. 881603). Work partially supported by the Italian Ministry of Education and Research (MIUR) in the framework of the FoReLab project (Departments of Excellence). The authors than
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od______1648::e533f53d85dfa8e2bd7a7e2548304671
https://hdl.handle.net/10481/83836
https://hdl.handle.net/10481/83836
NanoTCAD ViDES (Versatile DEvice Simulator) is an open-source suite of computing codes aimed at assessing the operation and the performance of nanoelectronic devices. It has served the computational nanoelectronic community for almost two decades and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od______1648::677a59791dd1e269f23c278778ed0297
https://hdl.handle.net/10481/82887
https://hdl.handle.net/10481/82887
Autor:
Pasadas Cantos, Francisco, Medina Rull, Alberto, Toral López, Alejandro, García Ruiz, Francisco Javier, Godoy Medina, Andrés, González Marín, Enrique
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od______1648::2132b533f548cac86f17932755a2da9b
https://hdl.handle.net/10481/80961
https://hdl.handle.net/10481/80961
Autor:
González Marín, Enrique, Toral López, Alejandro, Medina Rull, Alberto, García Ruiz, Francisco Javier, Godoy Medina, Andrés, Pasadas Cantos, Francisco
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od______1648::bb9cfd22674b0c728f0e3a8a6f9ef455
https://hdl.handle.net/10481/80960
https://hdl.handle.net/10481/80960
Autor:
Piacentini, Agata, Marian, Damiano, Schneider, Daniel S., González Marín, Enrique, Wang, Zhenyu, Otto, Martin, Canto, Bárbara, Radenovic, Aleksandra, Kis, Andras, Fiori, Gianluca, Lemme, Max C., Neumaier, Daniel
Publikováno v:
Advanced Electronic Materials; Sep2022, Vol. 8 Issue 9, p1-9, 9p
Publikováno v:
Digibug. Repositorio Institucional de la Universidad de Granada
instname
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Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::5d2cb34efb8883f569586b38340f8855
http://hdl.handle.net/10481/58491
http://hdl.handle.net/10481/58491
Autor:
Toral López, Alejandro, González Marín, Enrique, Medina, Alberto, García Ruiz, Francisco Javier, Rodríguez Santiago, Noel, Godoy Medina, Andrés
Publikováno v:
Digibug. Repositorio Institucional de la Universidad de Granada
Universidad Camilo José Cela (UCJC)
Universidad Camilo José Cela (UCJC)
2D-materials based BioFETs show up as a promising alternative to nanowire based BioFETs, thanks to their higher sensitivity, compatibility with planar technology and easier surface functionalization. Additionally, this technology facilitates the poss
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::3a37f002d966b6e4edfa0bc6775205c5
http://hdl.handle.net/10481/55921
http://hdl.handle.net/10481/55921
Autor:
Toral López, Alejandro, González-Medina, Jose María, González Marín, Enrique, Marin-Sanchez, Antonio, García Ruiz, Francisco Javier, Godoy Medina, Andrés
Publikováno v:
Digibug. Repositorio Institucional de la Universidad de Granada
instname
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In this work we address the simulation of 2D materials based Field Effect Transistors advancing a simple method to take into account the Density of States of arbitrary materials in a Drift-Diffusion transport scheme.
The authors would like to th
The authors would like to th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::2c11f08587d3e736e3c01c8377cccd9d
http://hdl.handle.net/10481/58486
http://hdl.handle.net/10481/58486
Autor:
González Marín, Enrique
Publikováno v:
Digibug. Repositorio Institucional de la Universidad de Granada
instname
instname
Tesis Univ. Granada. Departamento de Electrónica y Tecnología de los Computadores
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::8c7c8aa87cee82d1127dcf06ef1870d4
http://hdl.handle.net/10481/34203
http://hdl.handle.net/10481/34203
Autor:
García Ruiz, Francisco Javier, González Marín, Enrique, Martínez Blanque, Celso Jesús, Tienda Luna, Isabel María, González-Medina, Jose María, Toral López, Alejandro, Donetti, Luca, Godoy Medina, Andrés
Publikováno v:
Digibug. Repositorio Institucional de la Universidad de Granada
instname
instname
The hole mobility of GaSb field-effect transistor nanowires is analyzed as a function of the device orientation and gate bias. To this purpose, a self-consistent Poisson-Schrödinger solver with an 88 k·p Hamiltonian is employed to study the elec
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::155d31d01d78ea2b7748792a75ab88d4
http://hdl.handle.net/10481/58490
http://hdl.handle.net/10481/58490