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Autor:
Gonz'alez, J. C., Malachias, A., de Sousa, J. C., Andrade, R-Ribeiro, Moreira, M. V. B., de Oliveira, A. G.
We present direct evidence of enhanced Ga interdiffusion in InAs free-standing nanowires grown at moderate temperatures by molecular beam epitaxy on GaAs (111)B. Scanning electron microscopy together with X-ray diffraction measurements in coplanar an
Externí odkaz:
http://arxiv.org/abs/0803.1951
