Zobrazeno 1 - 10
of 199
pro vyhledávání: '"Gon-Ho Kim"'
Publikováno v:
Scientific Reports, Vol 9, Iss 1, Pp 1-11 (2019)
Abstract Medical treatment utilizing non-thermal plasma is based on the production of reactive oxygen species (ROS) and their interactions with biomatters. On the basis of empirical data from practices, plasma treatment has been planned with regard t
Externí odkaz:
https://doaj.org/article/e36b7311630141c0a300dcda4f006dc6
Autor:
Hyun-Kyung Chung, Mi-Young Song, Ji-Won Kwon, Myeong-Geon Lee, Jihoon Park, Namjae Bae, Jeamin Song, Gon-Ho Kim, Dipti, Yuri Ralchenko
Publikováno v:
Atoms, Vol 9, Iss 4, p 100 (2021)
Optical emission spectroscopy has been widely used in low-temperature argon plasma diagnostics. A coronal model is usually used to analyze the measured line ratios for diagnostics with a single temperature and density. However, many plasma processing
Externí odkaz:
https://doaj.org/article/8e646782936d4c1eb810c772bbc23cd2
Publikováno v:
Materials, Vol 14, Iss 11, p 3005 (2021)
In the semiconductor etch process, as the critical dimension (CD) decreases and the difficulty of the process control increases, in-situ and real-time etch profile monitoring becomes important. It leads to the development of virtual metrology (VM) te
Externí odkaz:
https://doaj.org/article/a895928c6d814e04b26c81e9a6ea2683
Publikováno v:
Current Applied Physics. 45:105-113
Autor:
Guensik Min, Yeonju Oh, Hwangsun Kim, Eunjoo Shin, Ki-Baek Roh, Jeongseok Kim, Nojun Kwak, Yanghoo Kim, Hyoung Chan Kim, Gon-Ho Kim, Heung Nam Han
Publikováno v:
SSRN Electronic Journal.
Autor:
Seolhye Park, Jaegu Seong, Yunchang Jang, Hyun-Joon Roh, Ji-Won Kwon, Jinyoung Lee, Sangwon Ryu, Jaemin Song, Ki-Baek Roh, Yeongil Noh, Yoona Park, Yongsuk Jang, Taeyoung Cho, Jae-Ho Yang, Gon-Ho Kim
Publikováno v:
Journal of the Korean Physical Society. 80:647-669
Autor:
In Je Kang, Min-Keun Bae, In Sun Park, Hyun-Jong Woo, Taihyeop Lho, Jeong-Sun Ahn, Doo-Hee Chang, Soon-Gook Cho, Geun-Sik Choi, Heung-Gyun Choi, Yong-Sup Choi, Bo-Hyun Chung, Tae Hun Chung, Jeong-Joon Do, Bon-Cheol Goo, Sung Hoon Hong, Suk-Ho Hong, Jong-Sik Jeon, Sung-Kiu Joo, Seo Jin Jung, Seok-Won Jung, Young-Dae Jung, Yong Ho Jung, Kwang-Cheol Ko, Beom-Sik Kim, Gon-Ho Kim, Hye-Ran Kim, Heung-Su Kim, Jin-Hee Kim, Jong-Il Kim, Jae Yong Kim, Kyung-Cheol Kim, Myung Kyu Kim, Sang-You Kim, Jin-Woo Kim, Yong-Kyun Kim, Gyea Young Kwak, Dong-Han Lee, Heon-Ju Lee, Min Ji Lee, Myoung-Jae Lee, Seung-Hwa Lee, Eun-Kyung Park, Dong Chan Seok, Byoung-Kyu Lee, Seung Jeong Noh, Young-Jun Seo, Yun-Keun Shim, Jong Ho Sun, Byung-Hoon Oh, Cha-Hwan Oh, Hye Taek Oh, Young-Suk Oh, Sang Joon Park, Hyun Jong You, Hun Suk You, Kyu-Sun Chung
Publikováno v:
Journal of the Korean Physical Society. 80:717-734
Autor:
Hyun-Jong Woo, In Sun Park, In Je Kang, Soon-Gook Cho, Yong-Sup Choi, Jeong-Sun Ahn, Min-Keun Bae, Doo-Hee Chang, Geun-Sik Choi, Heung-Gyun Choi, Bo-Hyun Chung, Tae Hoon Chung, Jeong-Joon Do, Bon-Cheol Goo, Sung Hoon Hong, Suk-Ho Hong, Jong-Sik Jeon, Sung-Kiu Joo, Seo Jin Jung, Seok-Won Jung, Young-Dae Jung, Yong Ho Jung, Kwang-Cheol Ko, Beom-Sik Kim, Gon-Ho Kim, Hye-Ran Kim, Heung-Su Kim, Jin-Hee Kim, Jong-Il Kim, Jae Yong Kim, Kyung-Cheol Kim, Myung Kyu Kim, Sang-You Kim, Jin-Woo Kim, Yong-Kyun Kim, Gyea Young Kwak, Dong-Han Lee, Heon-Ju Lee, Min Ji Lee, Myoung-Jae Lee, Seung-Hwa Lee, Taihyeop Lho, Eun-Kyung Park, Dong Chan Seok, Byoung-Kyu Lee, Seung Jeong Noh, Young-Jun Seo, Yun-Keun Shim, Jong Ho Sun, Byung-Hoon Oh, Cha-Hwan Oh, Hye Taek Oh, Young-Suk Oh, Sang Joon Park, Hyun-Jong You, Hunsuk Yoo, Kyu-Sun Chung
Publikováno v:
Journal of the Korean Physical Society. 80:735-758
Publikováno v:
Journal of the Korean Physical Society. 80:233-240
Autor:
Gon-Ho Kim, Nam-Kyun Kim, Sanywon Ryu, Sangmin Jeong, Seolhye Park, Ji-Won Kwon, Yunchang Jang, Hyun-Joon Roh
Publikováno v:
Current Applied Physics. 19:1068-1075
A phenomenology-based virtual metrology (VM) for monitoring SiO2 etching depth was proposed by Park (2015). It achieved high prediction accuracy by introducing newly developed plasma information (PI) variables as designated inputs, called PI-VM. The