Zobrazeno 1 - 10 of 199 pro vyhledávání: '"Gon-Ho Kim"'
1
Akademický článek
Quantitation of the ROS production in plasma and radiation treatments of biotargets
Autor: Wan-Ook Ji, Min-Ho Lee, Gon-Ho Kim, Eun-Hee Kim
Publikováno v: Scientific Reports, Vol 9, Iss 1, Pp 1-11 (2019)
Abstract Medical treatment utilizing non-thermal plasma is based on the production of reactive oxygen species (ROS) and their interactions with biomatters. On the basis of empirical data from practices, plasma treatment has been planned with regard t
Externí odkaz: https://doaj.org/article/e36b7311630141c0a300dcda4f006dc6
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2
Akademický článek
Population Kinetics Modeling of Low-Temperature Argon Plasma
Autor: Hyun-Kyung Chung, Mi-Young Song, Ji-Won Kwon, Myeong-Geon Lee, Jihoon Park, Namjae Bae, Jeamin Song, Gon-Ho Kim, Dipti, Yuri Ralchenko
Publikováno v: Atoms, Vol 9, Iss 4, p 100 (2021)
Optical emission spectroscopy has been widely used in low-temperature argon plasma diagnostics. A coronal model is usually used to analyze the measured line ratios for diagnostics with a single temperature and density. However, many plasma processing
Externí odkaz: https://doaj.org/article/8e646782936d4c1eb810c772bbc23cd2
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3
Akademický článek
Development of Virtual Metrology Using Plasma Information Variables to Predict Si Etch Profile Processed by SF6/O2/Ar Capacitively Coupled Plasma
Autor: Ji-Won Kwon, Sangwon Ryu, Jihoon Park, Haneul Lee, Yunchang Jang, Seolhye Park, Gon-Ho Kim
Publikováno v: Materials, Vol 14, Iss 11, p 3005 (2021)
In the semiconductor etch process, as the critical dimension (CD) decreases and the difficulty of the process control increases, in-situ and real-time etch profile monitoring becomes important. It leads to the development of virtual metrology (VM) te
Externí odkaz: https://doaj.org/article/a895928c6d814e04b26c81e9a6ea2683
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