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Laser-induced incandescence (LII) of silicon surface is investigated under the excitation by a Q-switched YAG:Nd laser. With the increase of laser irradiation dose, the increase of LII signal is observed, which is attended by visible changes of the s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od______1456::e6a3e9663043d6c13ae49c5e8b73d8da
http://dspace.nbuv.gov.ua/handle/123456789/118730
http://dspace.nbuv.gov.ua/handle/123456789/118730
