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Hydrogen reactions with dopants and impurities in solar silicon from first principles

Autor: Coutinho, José, Gomes, Diana, Torres, Vitor J. B., Fattah, Tarek O. Abdul, Markevich, Vladimir P., Peaker, Anthony R.

Publikováno v: Solar RRL 8, 2300639 (2024)

We present a theoretical account of some of the most likely hydrogen-related reactions with impurities in n-type and p-type solar-grade silicon. These include reactions with dopants and carbon, which are relevant in the context of life-time degradati

Externí odkaz: http://arxiv.org/abs/2402.00434

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Theory of reactions between hydrogen and group-III acceptors in silicon

Autor: Coutinho, José, Gomes, Diana, Torres, Vitor J. B., Fattah, Tarek O. Abdul, Markevich, Vladimir P., Peaker, Anthony R.

Publikováno v: Physical Review B 108, 014111 (2023)

The thermodynamics of several reactions involving atomic and molecular hydrogen with group-III acceptors is investigated. The results provide a first-principles-level account of thermally- and carrier-activated processes involving these species. Acce

Externí odkaz: http://arxiv.org/abs/2307.15633

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Dynamics of hydrogen in silicon at finite temperatures from first-principles

Autor: Gomes, Diana, Markevich, Vladimir P., Peaker, Anthony R., Coutinho, José

Publikováno v: Physica Status Solidi B 2022, 2100670

Hydrogen point defects in silicon still hold unsolved problems, whose disclosure is fundamental for future advances in Si technologies. Among the open issues is the mechanism for the condensation of atomic hydrogen into molecules in Si quenched from

Externí odkaz: http://arxiv.org/abs/2204.13334

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