Zobrazeno 1 - 10
of 45
pro vyhledávání: '"Gomes, Lidia C."'
Autor:
Félix, Isaac M., Pontes, Jessé M., Gomes, Djardiel S., Guerra, Thiago B. G., Azevedo, Sérgio A. F., Machado, Leonardo D., Gomes, Lídia C., Tromer, Raphael M.
The boron nitride (BN) analogue of 8-16-4 graphyne, termed SBNyne, is proposed for the first time. Its physical properties were explored using first-principles calculations and classical molecular dynamics (MD) simulations. Thermal stability assessme
Externí odkaz:
http://arxiv.org/abs/2406.13407
Autor:
Ciesielski, Kamil M., Ortiz, Brenden R., Gomes, Lidia C., Meschke, Vanessa, Adamczyk, Jesse M., Braden, Tara L., Kaczorowski, Dariusz, Ertekin, Elif, Toberer, Eric S.
Recent discoveries of materials with ultra-low thermal conductivity open a pathway to significant developments in the field of thermoelectricity. Here, we conduct a comparative study of three chemically similar antimonides to establish the root cause
Externí odkaz:
http://arxiv.org/abs/2301.10821
Autor:
Levy-Wendt, Ben L., Ortiz, Brenden R., Gomes, Lìdia C., Stone, Kevin H., Passarello, Donata, Ertekin, Elif, Toberer, Eric S., Toney, Michael F.
Publikováno v:
Phys. Rev. Materials 5, 015402 (2021)
The ability to control carrier concentration based on the extent of Cu solubility in the $\mathrm{Cu_{2x}Hg_{2-x}GeTe_4}$ alloy compound (where 0 $\leq$ x $\leq$ 1) makes $\mathrm{Cu_{2x}Hg_{2-x}GeTe_4}$ an interesting case study in the field of ther
Externí odkaz:
http://arxiv.org/abs/2010.04784
Publikováno v:
In Computer Physics Communications June 2023 287
Autor:
Collins, James L., Tadich, Anton, Wu, Weikang, Gomes, Lidia C., Rodrigues, Joao N. B., Liu, Chang, Hellerstedt, Jack, Ryu, Hyejin, Tang, Shujie, Mo, Sung-Kwan, Adam, Shaffique, Yang, Shengyuan A., Fuhrer, Michael. S., Edmonds, Mark T.
Publikováno v:
Nature 564, 390 (2018)
The electric field induced quantum phase transition from topological to conventional insulator has been proposed as the basis of a topological field effect transistor [1-4]. In this scheme an electric field can switch 'on' the ballistic flow of charg
Externí odkaz:
http://arxiv.org/abs/1805.08378
Autor:
Edmonds, Mark T., Collins, James L., Hellerstedt, Jack, Yudhistira, Indra, Gomes, Lídia C., Rodrigues, João N. B., Adam, Shaffique, Fuhrer, Michael S.
Publikováno v:
Science Advances 3, eaao6661 (2017)
The close approach of the Fermi energy EF of a Dirac semimetal to the Dirac point ED uncovers new physics such as velocity renormalization,1,2,3 and the Dirac plasma 4,5 at |EF -ED| < kBT, where kBT is the thermal energy. In graphene, substrate disor
Externí odkaz:
http://arxiv.org/abs/1612.03385
Publikováno v:
Phys. Rev. B 94, 155428 (2016)
The excitonic spectra of single layer GeS and GeSe are predicted by ab initio GW-Bethe Salpeter equation calculations. G 0 W 0 calculations for the band structures find a fundamental band gap of 2.85 eV for GeS and 1.70 eV for GeSe monolayer. However
Externí odkaz:
http://arxiv.org/abs/1607.07564
Publikováno v:
Phys. Rev. B 94, 054103 (2016)
Point defects in the binary group-IV monochalcogenide monolayers of SnS, SnSe, GeS, GeSe are investigated using density-functional-theory calculations. Several stable configurations are found for oxygen defects, however we give evidence that these ma
Externí odkaz:
http://arxiv.org/abs/1604.04092
We use first principles calculations to investigate the lattice properties of group-IV monochalcogenides. These include static dielectric permittivity, elastic and piezoelectric tensors. For the monolayer, it is found that the static permittivity, be
Externí odkaz:
http://arxiv.org/abs/1511.01645
Autor:
Gomes, Lidia C., Carvalho, A.
The group-IV monochalcogenides SnS, GeS, SnSe and GeSe form a family within the wider group of semiconductor `phosphorene analogues'. Here, we used first principles calculations to investigate systematically their structural, electronic and optical p
Externí odkaz:
http://arxiv.org/abs/1504.05627