Zobrazeno 1 - 10
of 393
pro vyhledávání: '"Goltsman, G."'
Autor:
Kravtsov, M., Shilov, A. L., Yang, Y., Pryadilin, T., Kashchenko, M. A., Popova, O., Titova, M., Voropaev, D., Wang, Y., Shein, K., Gayduchenko, I., Goltsman, G. N., Lukianov, M., Kudriashov, A., Taniguchi, T., Watanabe, K., Svintsov, D. A., Principi, A., Adam, S., Novoselov, K. S., Bandurin, D. A.
Light incident upon materials can induce changes in their electrical conductivity, a phenomenon referred to as photoresistance. In semiconductors, the photoresistance is negative, as light-induced promotion of electrons across the band gap enhances t
Externí odkaz:
http://arxiv.org/abs/2403.18492
Autor:
Shein, K., Zharkova, E., Kashchenko, M. A., Kolbatova, A. I., Lyubchak, A., Elesin, L., Nguyen, E., Semenov, A., Charaev, I., Schilling, A., Goltsman, G. N., Novoselov, K. S., Gayduchenko, I., Bandurin, D. A.
Publikováno v:
Nano Letter 24, 7, 2282 - 2288, 2024
The rapid development of infrared spectroscopy, observational astronomy, and scanning near-field microscopy has been enabled by the emergence of sensitive mid- and far-infrared photodetectors. Owing to their exceptional signal-to-noise ratio and fast
Externí odkaz:
http://arxiv.org/abs/2311.13150
Autor:
Lomakin, A. I., Baeva, E. M., Triznova, A. D., Titova, N. A., Zolotov, P. I., Semenov, A. V., Sunegin, D. E., Lubenchenko, A. V., Kolbatova, A. I., Goltsman, G. N.
We report on experimental study of the effect of disorder on electronic parameters and inelastic scattering mechanisms in ultrathin superconducting NbN films, which are commonly used in single-photon detectors. An increase in disorder in the studied
Externí odkaz:
http://arxiv.org/abs/2207.05012
Autor:
Baeva, E. M., Kolbatova, A. I., Titova, N. A., Saha, S., Boltasseva, A., Bogdanov, S., Shalaev, V. M., Semenov, A. V., Levchenko, A., Goltsman, G. N., Khrapai, V. S.
Publikováno v:
Phys. Rev. B 110, 104519 (2024)
We investigate the temporal and spatial scales of resistance fluctuations ($R$-fluctuations) at the superconducting resistive transition accessed through voltage fluctuations measurements in thin epitaxial TiN films. This material is characterized by
Externí odkaz:
http://arxiv.org/abs/2202.06309
Autor:
Baeva, E. M., Kolbatova, A. I., Titova, N. A., Saha, S., Boltasseva, A., Bogdanov, S., Shalaev, V. M., Semenov, A. V., Goltsman, G. N., Khrapai, V. S.
Publikováno v:
Supercond. Sci. Technol. 37, 105017 (2024)
We investigate the effect of various fluctuation mechanisms on the DC resistance in superconducting devices based on epitaxial titanium nitride (TiN) films. The samples we studied show a relatively steep resistive transition (RT), with a transition w
Externí odkaz:
http://arxiv.org/abs/2202.06310
Autor:
Baeva, E. M., Titova, N. A., Veyrat, L., Sacépé, B., Semenov, A. V., Goltsman, G. N., Kardakova, A. I., Khrapai, V. S.
Publikováno v:
Phys. Rev. Applied 15, 054014 (2021)
Here we examine the role of the amorphous insulating substrate in the thermal relaxation in thin NbN, InO$_x$, and Au/Ni films at temperatures above 5 K. The studied samples are made up of metal bridges on an amorphous insulating layer lying on or su
Externí odkaz:
http://arxiv.org/abs/2101.07071
Publikováno v:
Phys. Rev. A 101, 032306 (2020)
We experimentally demonstrate a quantum receiver based on Kennedy scheme for discrimination between two phase-modulated weak coherent states. The receiver is assembled entirely from the standard fiber-optic elements and operates at the conventional t
Externí odkaz:
http://arxiv.org/abs/1911.08932
Publikováno v:
In Experimental Gerontology August 2023 179
Autor:
Saveskul, N. A., Titova, N. A., Baeva, E. M., Semenov, A. V., Lubenchenko, A. V., Saha, S., Reddy, H., Bogdanov, S. I, Marinero, E. E., Shalaev, V. M., Boltasseva, A., Khrapai, V. S., Kardakova, A. I., Goltsman, G. N.
Publikováno v:
Phys. Rev. Applied 12, 054001 (2019)
We analyze the evolution of the normal and superconducting electronic properties in epitaxial TiN films, characterized by high Ioffe-Regel parameter values, as a function of the film thickness. As the film thickness decreases, we observe an increase
Externí odkaz:
http://arxiv.org/abs/1903.05009
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