Zobrazeno 1 - 10
of 59
pro vyhledávání: '"Golosov, D. I."'
Autor:
Golosov, D. I.
Publikováno v:
Phys. Rev. B. vol. 101, 165130 (2020)
We propose a single-site mean-field description, an analogue of Weiss mean-field theory, suitable for narrow-band systems with correlation-induced hybridisation at finite temperatures. Presently this approach, based on the notion of a fluctuating on-
Externí odkaz:
http://arxiv.org/abs/1911.00923
Autor:
Golosov, D. I.
Publikováno v:
Physica B vol. 536, pp. 682-686 (2018)
In an extended Falicov-Kimball model, an excitonic insulator phase can be stabilised at zero temperature. With increasing temperature, the excitonic order parameter (interaction-induced hybridisation on-site, characterised by the absolute value and p
Externí odkaz:
http://arxiv.org/abs/1710.09413
Autor:
Golosov, D. I.
Publikováno v:
J. Low Temp. Phys. vol. 188, p. 67 (2017)
We consider quasi-two-dimensional gas of electrons in a typical Si-MOSFET, assuming repulsive contact interaction between electrons. Magnetisation and susceptibility are evaluated within the mean-field approach. Finite thickness of the inversion laye
Externí odkaz:
http://arxiv.org/abs/1609.03538
Autor:
Golosov, D. I.
Publikováno v:
J. Magn. Magn. Mater., vol. 400, pp. 93-98 (2016)
Motivated by recent experimental work on magnetic properties of Si-MOSFETs, we report a calculation of magnetisation and susceptibility of electrons in an inversion layer, taking into account the co-ordinate dependence of electron wave function in th
Externí odkaz:
http://arxiv.org/abs/1509.01320
Publikováno v:
Phys. Rev. B vol. 88, 155313 (2013)
We have performed conductivity measurements on a Si-MOSFET sample with a slot in the upper gate, allowing for different electron densities n_1 and n_2 across the slot. Dynamic longitudinal resistance was measured by a standard lock-in technique, whil
Externí odkaz:
http://arxiv.org/abs/1307.6260
Autor:
Golosov, D. I.
Publikováno v:
Phys. Status Solidi B vol. 250, pp. 557-561 (2013)
We consider a spinless extended Falicov--Kimball model at half-filling, for the case of opposite-parity bands. Within the Hartree--Fock approach, we calculate the excitation energies in the chiral phase, which is a possible mean-field solution in the
Externí odkaz:
http://arxiv.org/abs/1210.0185
Autor:
Golosov, D. I.
Publikováno v:
Phys. Rev. B vol. 86, 155134 (2012)
We consider the excitonic insulator state (often associated with electronic ferroelectricity), which arises on the phase diagram of an extended spinless Falicov--Kimball model (FKM) at half-filling. Within the Hartree--Fock approach, we calculate the
Externí odkaz:
http://arxiv.org/abs/1204.6499
Publikováno v:
Europhys. Lett. vol. 97, 37002 (2012)
Positive magnetoresistance (PMR) of a silicon MOSFET in parallel magnetic fields B has been measured at high electron densities n >> n_c where n_c is the critical density of the metal-insulator transition (MIT). It turns out that the normalized PMR c
Externí odkaz:
http://arxiv.org/abs/1112.1819
Publikováno v:
Ann. Phys. (Berlin) vol. 18, pp. 913-917 (2009)
We report measurements on a Si-MOSFET sample with a slot in the upper gate, allowing for different electron densities n_{1,2} across the slot. The dynamic longitudinal resistance was measured by the standard lock-in technique, while maintaining a lar
Externí odkaz:
http://arxiv.org/abs/0909.1491
Autor:
Golosov, D. I.
Publikováno v:
Phys. Rev. Lett. vol. 104, 207207 (2010)
A new minimal model is constructed for the doped manganese oxides which exhibit colossal magnetoresistance (CMR), involving broad spin-majority conduction band as well as nearly localised spin-minority electron states. A simple mean field analysis yi
Externí odkaz:
http://arxiv.org/abs/0907.5512