Zobrazeno 1 - 10
of 87
pro vyhledávání: '"Golishnikov, A. A."'
Autor:
Golishnikov А. А., Putrya M.G.
Publikováno v:
Tekhnologiya i Konstruirovanie v Elektronnoi Apparature, Iss 1, Pp 36-41 (2014)
Plasma etch process for thought-silicon via (TSV) formation is one of the most important technological operations in the field of metal connections creation between stacked circuits in 3D assemble technology. TSV formation strongly depends on paramet
Externí odkaz:
https://doaj.org/article/244df75225814c1f8781bf69e12ca486
Autor:
Belov, A. N.1 (AUTHOR), Golishnikov, A. A.1 (AUTHOR), Mastinin, A. M.1 (AUTHOR), Perevalov, A. A.1 (AUTHOR), Shevyakov, V. I.1 (AUTHOR) Shev@dsd.miee.ru
Publikováno v:
Semiconductors. Dec2019, Vol. 53 Issue 15, p2024-2028. 5p.
Publikováno v:
Semiconductors. 53:2024-2028
An alternative to the currently existing elemental basis for creating dynamic random-access memory and flash memory is memristor structures, i.e., two-electrode systems, whose operation is based on the resistance switching effect. In this paper, the
Publikováno v:
Ferroelectrics. 550:36-41
In this paper, the study of the dynamic pyroelectric effect under different powers of modulated heat flux in deuterated triglycine sulfate (DTGS) near the Curie point is presented. It was f...
Publikováno v:
Proceedings of Universities. Electronics. 24:22-29
Publikováno v:
2021 IEEE Conference of Russian Young Researchers in Electrical and Electronic Engineering (ElConRus).
This paper presents the study of silicon microneedles patterns of formation by a method of anisotropic wet chemical etching in potassium hydroxide solution. Anisotropic etching speed dependencies from solute concentration and temperature have been ob
Publikováno v:
Nanotechnologies in Russia. 13:609-613
In this work, a process solution for the formation of an array of piezo- and pyroelectric structures with the use of a matrix of nanoprofiled silica is demonstrated. It is proposed to use plasma etching through a hard mask of porous anodic alumina fo
Autor:
Alexander V. Solnyshkin, M. V. Kislitsin, A. A. Golishnikov, V. I. Shevyakov, Alexey Belov, A. A. Perevalov
Publikováno v:
Nanotechnologies in Russia. 13:34-37
In this paper we demonstrate a technological route for the formation of an array of memristor structures using a self-assembly matrix of porous anodic aluminum oxide. We propose using a porous alumina matrix as a solid mask to develop pores in the de
Publikováno v:
Proceedings of Universities. ELECTRONICS. 22:191-194
Publikováno v:
International Conference on Micro- and Nano-Electronics 2018.
In this work experimental research results of silicon deep plasma etching features during 3D-TSV structure producing in inductively coupled plasma are presented. Silicon etching operational parameters influence (inductor RF power, working gas consump