Výsledky vyhledávání - "Goldman, Rachel"

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Lattice-Matched Multiple Channel AlScN/GaN Heterostructures

Autor: Nguyen, Thai-Son, Pieczulewsi, Naomi, Savant, Chandrashekhar, Cooper, Joshua J. P., Casamento, Joseph, Goldman, Rachel S., Muller, David A., Xing, Huili G., Jena, Debdeep

AlScN is a new wide bandgap, high-k, ferroelectric material for RF, memory, and power applications. Successful integration of high quality AlScN with GaN in epitaxial layer stacks depends strongly on the ability to control lattice parameters and surf

Externí odkaz: http://arxiv.org/abs/2410.09153

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Homologous self-assembled superlattices: What causes their periodic polarity switching? Review, model, and experimental test

Autor: Thakur, Varun, Benafsha, Dor, Turkulets, Yury, Azulay, Almog R., Liang, Xin, Goldman, Rachel S., Shalish, Ilan

Publikováno v: Advanced Physics Research 2023

Quantum semiconductor structures are commonly achieved by bandgap engineering that relies on the ability to switch from one semiconductor to another during their growth. Growth of a superlattice is typically demanding technologically. In contrast, ac

Externí odkaz: http://arxiv.org/abs/2208.13155

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Why do nanowires grow with their c-axis vertically-aligned in the absence of epitaxy?

Autor: Azulay, Almog R., Turkulets, Yury, Del Gaudio, Davide, Goldman, Rachel S., Shalish, Ilan

Publikováno v: Scientific Reports, 10, 6554 (2020)

Images of uniform and upright nanowires are fascinating, but often, they are quite puzzling, when epitaxial templating from the substrate is clearly absent. Here, we reveal the physics underlying one such hidden growth guidance mechanism through a sp

Externí odkaz: http://arxiv.org/abs/1809.01838

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