Zobrazeno 1 - 10
of 458
pro vyhledávání: '"Goiran, M"'
Autor:
Yan, H., Zeng, S. W., Rubi, K., Omar, G. J., Zhang, Z. T., Goiran, M., Escoffier, W., Ariando, A.
Due to the coexistence of many emergent phenomena, including 2D superconductivity and a large Rashba spin-orbit coupling, 5d transition metal oxides based two-dimensional electron systems (2DESs) have been prospected as one of the potential intrants
Externí odkaz:
http://arxiv.org/abs/2209.12390
Autor:
Chow, L. E., Yip, K. Y., Pierre, M., Zeng, S. W., Zhang, Z. T., Heil, T., Deuschle, J., Nandi, P., Sudheesh, S. K., Lim, Z. S., Luo, Z. Y., Nardone, M., Zitouni, A., van Aken, P. A., Goiran, M., Goh, S. K., Escoffier, W., Ariando, A.
Superconductivity can be destroyed by a magnetic field with an upper bound known as the Pauli-limit in spin-singlet superconductors. Almost all the discovered superconductors are spin-singlet, with the highest transition temperature $T_c$ at ambient
Externí odkaz:
http://arxiv.org/abs/2204.12606
Autor:
Leermakers, I., Rubi, K., Yang, M., Kerdi, B., Goiran, M., Escoffier, W., Rana, A. S., Smink, A. E. M., Brinkman, A., Hilgenkamp, H., Maan, J. C., Zeitler, U.
We have investigated the illumination effect on the magnetotransport properties of a two-dimensional electron system at the LaAlO$_3$/SrTiO$_3$ interface. The illumination significantly reduces the zero-field sheet resistance, eliminates the Kondo ef
Externí odkaz:
http://arxiv.org/abs/2108.09156
Autor:
Han, K., Huang, Z., Zeng, S. W., Yang, M., Li, C. J., Zhou, W. X., Wang, X. Renshaw, Venkatesan, T., Coey, J. M. D., Goiran, M., Escoffier, W., Ariando
Publikováno v:
Phys. Rev. Materials 1, 011601(R) (2017)
The quasi two-dimensional electron gas (q-2DEG) at oxide interfaces provides a platform for investigating quantum phenomena in strongly correlated electronic systems. Here, we study the transport properties at the high-mobility (La$_{0.3}$Sr$_{0.7}$)
Externí odkaz:
http://arxiv.org/abs/1706.09592
Autor:
Yang, M., Couturaud, O., Desrat, W., Consejo, C., Kazazis, D., Yakimova, R., Syväjärvi, M., Goiran, M., Béard, J., Frings, P., Pierre, M., Cresti, A., Escoffier, W., Jouault, B.
Publikováno v:
Physical Review Letters 117, 237702 (2016)
We report on the stability of the quantum Hall plateau in wide Hall bars made from a chemically gated graphene film grown on SiC. The $\nu=2$ quantized plateau appears from fields $B \simeq 5$ T and persists up to $B \simeq 80$ T. At high current den
Externí odkaz:
http://arxiv.org/abs/1611.08179
Autor:
Ikonnikov, A. V., Krishtopenko, S. S., Drachenko, O., Goiran, M., Zholudev, M. S., Platonov, V. V., Kudasov, Yu. B., Korshunov, A. S., Maslov, D. A., Makarov, I. V., Surdin, O. M., Philippov, A. V., Marcinkiewicz, M., Ruffenach, S., Teppe, F., Knap, W., Mikhailov, N. N., Dvoretsky, S. A., Gavrilenko, V. I.
Publikováno v:
Phys. Rev. B 94, 155421 (2016)
We report on magnetospectroscopy of HgTe quantum wells in magnetic fields up to 45 T in temperature range from 4.2 K up to 185 K. We observe intra- and inter-band transitions from zero-mode Landau levels, which split from the bottom conduction and up
Externí odkaz:
http://arxiv.org/abs/1606.05485
Autor:
Kumar, A., Escoffier, W., Poumirol, J. M., Faugeras, C., Arovas, D. P., Fogler, M. M., Guinea, F., Roche, S., Goiran, M., Raquet, B.
Publikováno v:
Phys. Rev. Lett. 107, 126806, (2011)
The Integer Quantum Hall Effect (IQHE) is a distinctive phase of two-dimensional electronic systems subjected to a perpendicular magnetic field. Thus far, the IQHE has been observed in semiconductor heterostructures and in mono- and bi-layer graphene
Externí odkaz:
http://arxiv.org/abs/1104.1020
We report on magneto-transport measurement in disordered graphene under pulsed magnetic field of up to 57T. For large electron or hole doping, the system displays the expected anomalous Integer Quantum Hall Effect (IQHE) specific to graphene up to fi
Externí odkaz:
http://arxiv.org/abs/1004.2356
Autor:
Kopelevich, Y., Raquet, B., Goiran, M., Escoffier, W., da Silva, R. R., Pantoja, J. C. Medina, Lukyanchuk, I. A., Sinchenko, A., Monceau, P.
Measurements of basal plane longitudinal rho_b(B) and Hall rho_H(B) resistivities were performed on highly oriented pyrolytic graphite (HOPG) samples in pulsed magnetic field up to B = 50 T applied perpendicular to graphene planes, and temperatures 1
Externí odkaz:
http://arxiv.org/abs/0903.2369
Publikováno v:
Phys. Rev. B 79, 205314 (2009)
We find that the polarization field, B_chi, obtained by scaling the weak-parallel-field magnetoresistance at different electron densities in a dilute two-dimensional electron system in (111) silicon, corresponds to the spin susceptibility that grows
Externí odkaz:
http://arxiv.org/abs/0902.0887